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Teilenummer | DG2733 |
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Beschreibung | Dual SPDT Analog Switch | |
Hersteller | Vishay Siliconix | |
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Gesamt 9 Seiten DG2731/2732/2733
Vishay Siliconix
Low Voltage, 0.4 Ω, Dual SPDT Analog Switch
DESCRIPTION
The DG2731/2732/2733 are low voltage, low on-resis-
tance, dual single-pole/double-throw (SPDT) mono-
lithic CMOS analog switches designed for high
performance switching of analog signals. Combining
low-power, high speed, low on-resistance, and small
package size, the DG2731/2732/2733 are ideal for
portable and battery power applications.
The DG2731/2732/2733 have an operation range from
1.6 V to 4.3 V single supply. The DG2731 and DG2732
www.DahtaavSehetewt4oU.sceopmarate control pins with reverse control
logic. The DG2733 has an EN pin to enable the device
when the logic is high.
The DG2731/2732/2733 are 1.6-V logic compatible,
allowing the easy interface with low voltage DSP or
MCU control logic and ideal for one cell Li-ion battery
direct power.
The switch conducts signals within power rails equally
well in both directions when on, and blocks up to the
power supply level when off. Break-before-make is
guaranteed.
The DG2731/2732/2733 are built on Vishay Siliconix's
sub micron CMOS low voltage process technology and
provides greater than 300 mA latch-up protection, as
tested per JESD78.
As a committed partner to the community and the envi-
ronment, Vishay Siliconix manufactures this product
with lead (Pb)-free device terminations. DG2731/2732/
2733 are offered in a DFN or MSOP package. The
DFN package has a nickel-palladium-gold device ter-
mination and is represented by the lead (Pb)-free "-E4"
suffix. The MSOP package uses 100% matte Tin
device termination and is represented by the lead (Pb)-
free "-E3" suffix. Both the matte Tin and nickel-palla-
dium-gold device terminations meet all JEDEC stan-
dards for reflow and MSL ratings.
FEATURES
• Low Voltage Operation (1.65 V to 4.3 V)
• Low On-Resistance - rON: 0.3 Ω@ 3.6 V
• Fast Switching: TON = 50 ns @ 4.3 V
• TOFF = 14 ns @ 4.3 V
• Latch-Up Current > 300 mA (JESD78)
RoHS
COMPLIANT
BENEFITS
• Reduced Power Consumption
• High Accuracy
• Reduce Board Space
• TTL/1.6-V Logic Compatible
APPLICATIONS
• Cellular Phones
• Speaker Headset Switching
• Audio and Video Signal Routing
• PCMCIA Cards
• Battery Operated Systems
FUNCTIONAL BLOCK DIAGRAM AND PIN
CONFIGURATION
Document Number: 73484
S-51920–Rev. A, 12-Sep-05
www.vishay.com
1
DG2731/2732/2733
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
10000
1000
V+ = 4.3 V
VD = 4 V
INO(off), INC(off)
ICOM(off)
100
ICOM(on)
10
www.DataSheet4U.com
1
–40 –20
0
20 40 60 80 100
4000
3000
2000
1000
0
–1000
–2000
–3000
–4000
–5000
–6000
–7000
–8000
–9000
–10000
–11000
–12000
–13000
–14000
V+ = 4.3 V
TA = 25 C
ICOM(on)
INO(off), IINC(off)
ICOM(off)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Temperature (˚C)
Leakage Current vs. Temperature
VCOM, VNO, VNC – Analog Voltage (V)
Leakage vs. Analog Voltage
4.5
250
200 tON V+ = 1.8 V
150
tON V+ = 2.7 V
100
tON V+ = 4.3 V
50
tOFF V+ = 4.3 V
tOFF V+ = 1.8 V
0 tOFF V+ = 2.7 V
–40 –20 0
20 40 60 80 100
Frequency (Hz)
Switching Time vs. Temperature
10
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
100 K
LOSS
OIRR
XTALK
V+ = 2.7 V
RL = 50 Ω
1 M 10 M
100 M
Temperature (˚C)
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
1G
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
1.5 2.5 3.5 4.5
V+ – Supply Voltage (V)
Switching Threshold vs. Supply Voltage
80
70
60
50
40 V+ = 4.3 V
30
20 V+ = 3 V
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCOM – Analog Voltage (V)
Charge Injection vs. Analog Voltage
www.vishay.com
6
Document Number: 73484
S-51920–Rev. A, 12-Sep-05
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ DG2733 Schematic.PDF ] |
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