Datenblatt-pdf.com


R1EX24256ASAS0A Schematic ( PDF Datasheet ) - Renesas Technology

Teilenummer R1EX24256ASAS0A
Beschreibung Two-wire serial interface 256k EEPROM
Hersteller Renesas Technology
Logo Renesas Technology Logo 




Gesamt 23 Seiten
R1EX24256ASAS0A Datasheet, Funktion
R1EX24256ASAS0A
R1EX24256ATBS0A
Two-wire serial interface
256k EEPROM (32-kword × 8-bit)
www.DataSheet4U.com
REJ03C0322-0100
Rev.1.00
April. 04, 2008
Description
R1EX24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable
ROM). They realize high speed, low power consumption and a high level of reliability by employing
advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also
have a 64-byte page programming function to make their write operation faster.
Note:
Renesas Technology’s serial EEPROM are authorized for using consumer applications such as
cellular phone, camcorders, audio equipment. Therefore, please contact Renesas Technology’s
sales office before using industrial applications such as automotive systems, embedded controllers,
and meters.
Features
Single supply: 1.8 V to 5.5 V
Two-wire serial interface (I2C serial bus)
Clock frequency: 400 kHz
Power dissipation:
Standby: 2 µA (max)
Active (Read): 1 mA (max)
Active (Write): 5 mA (max)
Automatic page write: 64-byte/page
Write cycle time: 5 ms
Endurance: 106 Cycles
Data retention: 10 Years
REJ03C0322-0100 Rev.1.00 April. 04, 2008
Page 1 of 21






R1EX24256ASAS0A Datasheet, Funktion
R1EX24256xxS0A
Timing Waveforms
Bus Timing
SCL
www.DataSheet4U.com
SDA
(in)
SDA
(out)
WP
tF
tSU.STA
tHD.STA
tAA
tSU.WP
1/fSCL
tHIGH
tLOW
tHD.DAT
tSU.DAT
tDH
tR
tSU.STO
tBUF
tHD.WP
Write Cycle Timing
Stop condition
Start condition
SCL
SDA
D0 in
Write data
(Address (n))
ACK
tWC
(Internally controlled)
REJ03C0322-0100 Rev.1.00 April. 04, 2008
Page 6 of 21

6 Page









R1EX24256ASAS0A pdf, datenblatt
R1EX24256xxS0A
Write Operations(WP=Low)
Byte Write: (Write operation during WP=Low status)
A write operation requires an 8-bit device address word with R/W = “0”. Then the EEPROM sends
acknowledgment "0" at the ninth clock cycle. After these, the 128kbit and 256kbit EEPROMs receive 2
sequence 8-bit memory address words. Upon receipt of this memory address, the EEPROM outputs
acknowledgment "0" and receives a following 8-bit write data. After receipt of write data, the EEPROM
outputs acknowledgment "0". If the EEPROM receives a stop condition, the EEPROM enters an
internally-timed write cycle and terminates receipt of SCL, SDA inputs until completion of the write cycle.
The EEPROM returns to a standby mode after completion of the write cycle.
www.DataSheetB4yUt.ceoWmrite Operation
WP
Device
address
256k 1 0 1 0
Start
1st Memory
address (n)
W
ACK
R/W
Note: 1. Don't care bit
2nd Memory
address (n)
Write data (n)
ACK
ACK
ACK Stop
REJ03C0322-0100 Rev.1.00 April. 04, 2008
Page 12 of 21

12 Page





SeitenGesamt 23 Seiten
PDF Download[ R1EX24256ASAS0A Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
R1EX24256ASAS0ATwo-wire serial interface 256k EEPROMRenesas Technology
Renesas Technology
R1EX24256ASAS0ITwo-wire serial interface 256k EEPROMRenesas Technology
Renesas Technology

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche