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PDF CMT60N03 Data sheet ( Hoja de datos )
| Número de pieza | CMT60N03 | |
| Descripción | N-CHANNEL Logic Level Power MOSFET | |
| Fabricantes | Champion Microelectronic | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CMT60N03 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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APPLICATION
Buck Converter High Side Switch
Other Applications
VDSS
30V
RDS(ON) Typ.
10.8mΩ
PIN CONFIGURATION
TO-252
Front View
TO-263
Front View
www.DataSheet4U.com
CMT60N03
N-CHANNEL Logic Level Power MOSFET
FEATURES
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
ID Inductive Switching Curves
50A Improved UIS Ruggedness
SYMBOL
D
G
12 3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Source Voltage (Note 1)
Drain to Current Continuous Tc = 25 , VGS@10V (Note 2)
Continuous Tc = 100 , VGS@10V (Note 2)
Pulsed Tc = 25 , VGS@10V (Note 3)
Gate-to-Source Voltage Continue
Total Power Dissipation
Derating Factor above 25
Peak Diode Recovery dv/dt (Note 4)
Operating Junction and Storage Temperature Range
Single Pulse Avalanche Energy L=1.1mH,ID=30 Amps
Maximum Lead Temperature for Soldering Purposes
Maximum Package Body for 10 seconds
Pulsed Avalanche Rating
Symbol
VDSS
ID
ID
IDM
VGS
PD
dv/dt
TJ, TSTG
EAS
TL
TPKG
IAS
Value
30
50
Fig.3
Fig.6
±20
52
0.5
3.0
-55 to 150
500
300
260
Fig.8
Unit
V
A
V
W
W/
V/ns
mJ
THERMAL RESISTANCE
Symbol
Parameter
RθJC
Junction-to-case
Min Typ
RθJA Junction-to-ambient
(PCB Mount)
RθJA Junction-to-ambient
Max
2.4
50
62
Units
/W
/W
/W
Test Conditions
Water cooled heatsink, PD adjusted for a peak junction
temperature of +150
Minimum pad area, 2-oz copper, FR-4 circuit board, double
sided
1 cubic foot chamber, free air
2004/05/24 Preliminary
Champion Microelectronic Corporation
Page 1
1 page  
10000
1000
100 VGS = 10V
10
CMT60N03
N-CHANNEL Logic Level Power MOSFET
Figure 6. Maximum Peak Current Capability
TRANSCONDUCTANCE
MAY LIMIT CURRENT IN
THIS REGION
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25 -1--5----01---2-–--5---T---C---
1
1E-6
10E-6
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100E-6
1E-3 10E-3
tp, Pulse Width (Seconds)
100E-3
1E+0
10E+0
Figure 7. Typical Transfer Characteristics
30 PULSE DURATION = 250 µS
DUTY CYCLE = 0.5% MAX
25 VDS = 15 V
20
15 +150 oC
10 +25 oC
5
-55 oC
0
1.0
1.5 2.0 2.5 3.0 3.5
VGS, Gate-to-Source Voltage (V)
4.0
Figure 8. Unclamped Inductive Switching Capability
1000
If R≠ 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
R equals total Series resistance of Drain circuit
100
10
STARTING TJ = 25 oC
STARTING TJ = 150 oC
1
1E-6
10E-6 100E-6 1E-3 10E-3 100E-3
tAV, Time in Avalanche (Seconds)
Figure 9. Typical Drain-to-Source ON Resistance
vs Drain Current
100 PULSE DURATION = 10 µS
DUTY CYCLE = 0.5% MAX
TC=25°C
VGS = 4.5V
VGS = 10 V
10
0
50 100 150 200 250 300 350 400
ID, Drain Current (A)
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
1.6
1.5
1.4
1.3
1.2
1.1
1.0
PULSE DURATION = 250 µS
0.9 DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 15A
0.8
0.7
-75 -50 -25 0
25 50 75 100 125 150
TJ, Junction Temperature (oC)
2004/05/24 Preliminary
Champion Microelectronic Corporation
Page 5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet CMT60N03.PDF ] | |
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