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PDF W764M32V-XSBX Data sheet ( Hoja de datos )
| Número de pieza | W764M32V-XSBX | |
| Descripción | 64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory | |
| Fabricantes | White Electronic Designs | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de W764M32V-XSBX (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
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White Electronic Designs
W764M32V-XSBX
ADVANCED*
64Mx32 Flash Multi-Chip Package
3.0V Page Mode Flash Memory
FEATURES
Single power supply operation
• 3 volt read, erase, and program operations
I/O Control
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• All input levels (address, control, and DQ input
levels) and outputs are determined by voltage on
VIO input. VIO range is 1.65 to VCC
Secured Silicon Sector region
• 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
• May be programmed and locked at the factory or
by the customer
Flexible sector architecture
• Five hundred twelve 64 Kword (128 Kbyte) sectors
• Two hundred fifty-six 64 Kword (128 Kbyte)
sectors
• One hundred twenty-eight 64 Kword (128 Kbyte)
sectors
Compatibility with JEDEC standard
• Provides software compatibility for single-power
supply flash, and superior inadvertent write
protection
100,000 erase cycles per sector typical
20-year data retention typical
Software features
• Program Suspend and Resume: read other
sectors before programming operation is
completed
• Erase Suspend and Resume: read/program other
sectors before an erase operation is completed
• Data# polling and toggle bits provide status
• Unlock Bypass Program command reduces overall
multiple-word programming time
• CFI (Common Flash Interface) compliant: allows
host system to identify and accommodate multiple
flash devices
Hardware features
• Advanced Sector Protection
• WP#/ACC input accelerates programming
time (when high voltage is applied) for greater
throughput during system production. Protects
first or last sector regardless of sector protection
settings
• Hardware reset input (RESET#) resets device
• Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
PERFORMANCE CHARACTERISTICS
High Performance
• 100, 120 ns
• 8-word/16-byte page read buffer
• 25 ns page read times
• 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
Package option
• 107 BGA, 14mm x 17mm
• 1.0mm pitch
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2006
Rev. 2
1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
1 page  
White Electronic Designs
W764M32V-XSBX
ADVANCED*
Parameter
Input Load Current (1)
DC CHARACTERISTICS – CMOS COMPATIBLE
VCC = 3.3V ± 0.3V, -55°C ≤ TA ≤ +125°C
Symbol Conditions
ILI VIN = VSS to VCC, #VCC = VCC(MAX)
Min
Typ
A9 Input Load Current
Output Leakage Current
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VCC Active Current for Read (1)
VCC Intra-Page Read Current (1)
VCC Active Erase/Program Current (2,3)
VCC Standby Current
VCC Reset Current
Automatic Sleep Mode (4)
ILIT VCC = to VCC(MAX); A9 = 12.5V
ILO
VOUT = VSS to VCC, # VCC =
VCC(MAX)
CE# = VIL#, OE# = VIH, VCC =
ICC1
VCC(MAX); # f = 1 MHz, Byte Mode
CE# = VIL#, OE# = VIH, VCC =
VCC(MAX); # f = 5MHz, Word Mode
ICC2
CE# = VIL#, OE# = VIH, VCC =
VCC(MAX); f = 10MHz
ICC3
CE# = VIL#, OE# = VIH, VCC =
VCC(MAX)
VCC = VCC(MAX); VIO = VCC; OE# =
ICC4 VIH; # VIL = VSS + 0.3V/-0.1V; #
CE#, RESET# = VSS ± 0.3V
ICC5
VCC = VCC(MAX); VIO = VSS + 0.3V/-
0.1V; RESET# = VSS ± 0.3V
VCC = VCC(MAX); VIO = VCC; VIH =
ICC6 VCC ± 0.3V; #VIL = VSS + 0.3V/-
0.1V; WP#/ACC = VIH
ACC Accelerated Program Current
IACC
CE# = VIL, OE# = VIH, VCC =
VCC(MAX), #WP#/ACC = VIH
Input Low Voltage (5)
Input High Voltage (5)
Voltage for ACC Erase/Program
Acceleration
Voltage for Autoselect and Temporary
Sector Unprotect
Output Low Voltage (5)
Output High Voltage (5)
Low VCC Lock-Out Voltage
VIL
VIH
VHH VCC = 2.7 - 3.6V
VID VCC = 2.7 - 3.6V
VOL IOL = -100 µA
VOH IOH = -100 µA
VLKO
NOTES:
1. The ICC current is typically less than 2 mA/MHz, with OE# at VIH
2. ICC active while Embedded Erase or Embedded Program or Write Buffer Programming is in progress.
3. Not 100% tested.
4. Automatic sleep mode enables the lower power mode when addresses remain stable for tACC + 30ns.
5. VIO = 1.65-1.95V or 2.7-3.6V.
6. VCC = 3 V and VIO = 3V or 1.8V. When VIO is at 1.8V, I/O pins cannot operate at 3V.
WP#/ACC pin
VCC pin
-0.1
0.7 x VIO
11.5
11.5
0.85 x VIO
2.3
24
120
1
200
4
4
4
40
200
Max
WP/ACC: ±2.0
Others: ±1.0
35
±1.0
80
200
10
320
Unit
µA
µA
µA
mA
mA
mA
mA
20 µA
20 µA
20
80
320
0.3 x VIO
VIO + 0.3
12.5
12.5
0.15 x VIO
2.5
µA
mA
V
V
V
V
V
V
V
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2006
Rev. 2
5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
5 Page 
White Electronic Designs
W764M32V-XSBX
ADVANCED*
FIGURE 9: DATA POLLING TIMINGS (DURING EMBEDDED ALGORITHMS)
tRC
Addresses
CS#
tCH
www.DataSheet4U.com
OE#
tOEH
VA
tACC
tCE
tOE
tDF
WE#
tOH
DQ7
Complement
VA VA
Complement True
Valid Data High Z
DQ0-DQ6
Status Data
Status Data True
Valid Data High Z
RY/BY#
tBUSY
NOTE: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2006
Rev. 2
11 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
11 Page | ||
| Páginas | Total 16 Páginas | |
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