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PDF GB5B120KD Data sheet ( Hoja de datos )
| Número de pieza | GB5B120KD | |
| Descripción | IRGB5B120KD | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GB5B120KD (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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PD - 94385E
IRGB5B120KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
www.DataSheet•4UU.lctraosmoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• TO-220 Package.
C
G
E
n-channel
VCES = 1200V
IC = 6.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 2.75V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
TO-220AB
Max.
1200
12
6.0
24
24
12
6.0
24
± 20
89
36
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
1.4
2.8
–––
62
–––
Units
°C/W
g (oz)
1
8/18/04
1 page  
20
18
16
14
12
10
www.DataSheet4U.c8om
6
4
2
0
5
ICE = 6.0A
ICE = 12A
ICE = 24A
10 15
VGE (V)
20
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
IRGB5B120KD
20
18
16
14
12
10
8
6
4
2
5
ICE = 6.0A
ICE = 12A
ICE = 24A
10 15
VGE (V)
20
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
18
16
14
12
10
8
6
4
2
5
ICE = 6.0A
ICE = 12A
ICE = 24A
10 15
VGE (V)
20
Fig. 11 - Typical VCE vs. VGE
TJ = 125°C
www.irf.com
50
TJ = 25°C
40 TJ = 125°C
30
20
10 TJ = 125°C
TJ = 25°C
0
5 10 15
VGE (V)
20
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5
5 Page 
800 8
700 7
600
500
400
www.DataSheet4U.c3o0m0
200
100
90% Ice
tf
5% Vce
5% Ice
6
5
4
3
2
1
0
-100
0.2
Eoff Loss
0.4 0.6 0.8
Time (uS)
0
-1
1
Fig.WF2-Typ. Turn-off Loss Waveform
@ TJ =125°C using Fig. CT4
200 8
100
0
-100
QRR
trr
6
4
2
-200
0
-300
-400
-500
Pe a k
Ir r
10%
Pe a k
IRR
-2
-4
-6
-600
-8
-700
-10
-800
- 0 .2 5
- 0 .1 0
0 .0 5
time ( µ s )
0 .2 0
-12
0 .3 5
Fig.WF3-Typ. Diode Recovery Waveform
@ TJ =125°C using Fig. CT4
www.irf.com
IRGB5B120KD
1800
18
1600
16
1400
1200
1000
90% test current
TEST CURRENT
14
12
10
800 8
600 6
10% test current
400 4
tr
5% VCE
200 2
00
-200
Eon Loss
-2
0.3 0.4 0.5 0.6 0.7 0.8
Tim e (uS)
Fig.WF2-Typ. Turn-on Loss Waveform
@ TJ =125°C using Fig. CT4
1000
100
900 VCE
800
80
700
600 60
500
400 40
300
200 ICE 20
100
0
0.00
10.00
20.00 30.00
Time(uS)
40.00
0
50.00
Fig.WF4-Typ. S.C. Waveform
@ TC =150°C using Fig. CT3
11
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| PDF Descargar | [ Datasheet GB5B120KD.PDF ] | |
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