|
|
Teilenummer | C2611 |
|
Beschreibung | Plastic-Encapsulated Transistors | |
Hersteller | TRANSYS Electronics | |
Logo | ||
Gesamt 1 Seiten Transys
Electronics
LIMITED
www.DataSheet4U.com
TO-251 Plastic-Encapsulated Transistors
C 2611
FEATURES
Power dissipation
TRANSISTOR (NPN)
PCM:
1 W (Tamb=25℃)
Collector current
ICM: 0.2
Collector-base voltage
A
V(BR)CBO: 600 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-251
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
V(BR)CBO
Ic= 100µA, IE=0
V(BR)CEO
IC= 1mA , IB=0
V(BR)EBO
IE= 100µA, IC=0
ICBO VCB= 600V, IE=0
ICEO VCE= 400V, IB=0
IEBO VEB= 7V, IC=0
hFE(1)
VCE= 20V, IC= 20mA
hFE(2)
VCE= 10V, IC= 0.25 mA
VCE(sat)
IC= 50mA, IB= 10 mA
VBE(sat)
IC= 50 mA, IB= 10mA
600
400
7
10
5
V
V
V
100 µA
200 µA
100 µA
40
0.5 V
1.2 V
Transition frequency
fT
VCE= 20 V, IC=20mA
f = 1MHz
8
MHz
Fall time
Storage time
CLASSIFICATION OF hFE(1)
Rank
Range
10-15
15-20
t f IC=50mA,
IB1=-IB2=5mA,
t S VCC=45V
20-25
25-30
0.3 µs
1.5 µs
30-35
35-40
| ||
Seiten | Gesamt 1 Seiten | |
PDF Download | [ C2611 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
C2610 | NPN Transistor - 2SC2610 | Renesas |
C2611 | NPN Transistor - 2SC2611 | Hitachi Semiconductor |
C2611 | TRANSISTOR | Jiangsu Changjiang Electronics |
C2611 | Plastic-Encapsulated Transistors | TRANSYS Electronics |
C2612 | NPN Transistor - 2SC2612 | Hitachi Semiconductor |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |