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PDF RMPA5255 Data sheet ( Hoja de datos )
| Número de pieza | RMPA5255 | |
| Descripción | 4.9-5.9 GHz WLAN Linear Power Amplifier Module | |
| Fabricantes | Fairchild Semiconductor | |
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www.DataSheet4U.com
September 2005
RMPA5255
4.9–5.9 GHz WLAN Linear Power Amplifier Module
Features
■ Full 4.9 to 5.9 GHz operation
■ 34 dB small signal gain
■ 230 mA total current at 18 dBm modulated power out
■ 2.3% EVM at 18 dBm modulated power out
■ 3.3 V collector supply voltage
■ Integrated power detector with 20 dB dynamic range
■ RoHS compliant 5 x 5 x 1.5 mm leadless package
■ Internally matched to 50Ω and DC blocked RF
input/output
■ Internal DC bias de-coupling
■ Optimized for use in 802.11a applications
Description
The RMPA5255 power amplifier module is designed for high
performance WLAN applications in the 4.9–5.9 GHz frequency
band. The 10 pin, 5 x 5 x 1.5 mm package with internal match-
ing on both input and output to 50Ω, and internal bias network
components, allow for extremely simplified integration. An on-
chip detector provides power sensing capability. The PA’s low
power consumption and excellent linearity are achieved using
our InGaP Heterojunction Bipolar Transistor (HBT) technology.
Device
Electrical Characteristics1 802.11a OFDM Modulation
(176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Min Typ
Frequency
4.9
Collector Supply Voltage
Mirror Supply Voltage
Mirror Supply Current
3.0 3.3
2.9
26
Gain
Total Current @ 18dBm Pout
EVM @ 18dBm Pout2
Detector Output @ 18dBm Pout
Detector Threshold3
33
230
2.3
450
5
Notes:
1. VCC = 3.3V, VPC = 2.9V, TA = 25°C, PA is constantly biased, 50Ω system.
2. Percentage includes system noise floor of EVM = 0.8%.
3. POUT measured at PIN corresponding to power detection threshold.
Max
5.9
3.6
Units
GHz
V
V
mA
dB
mA
%
mV
dBm
©2005 Fairchild Semiconductor Corporation
RMPA5255 Rev. E
1
www.fairchildsemi.com
1 page  
Evaluation Board Bill of Materials
www.DataSheet4U.com
Evaluation Board Layout
Actual Board Size = 2.0" X 1.5"
Evaluation Board Turn-On Sequence1
Recommended turn-on sequence:
1) Connect common ground terminal to the Ground (GND) pin on the board.
2) Connect voltmeter to VDET (P-Sense).
3) Apply positive supply voltage (3.3 V) to pin VCC (Collector voltage).
4) Apply positive bias voltage (2.9 V) to pin VPC (Power Control voltage).
5) At this point, you should expect to observe the following positive currents flowing into the pins:
Pin Current
VCC
150 – 170 mA
VPC
21 – 31 mA
6) Apply input RF power to SMA connector pin RFIN. Current for pin VCC will vary depending on the input drive level.
7) Vary positive voltage VPC from +2.9 V to +0 V to shut down the amplifier or alter the power level. Shut down current flow
into the pins:
Pin Current
VCC
<1 nA
Recommended turn-off sequence:
Use reverse order described in the turn-on sequence above.
Note:
1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design.
RMPA5255 Rev. E
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RMPA5255.PDF ] | |
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