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PDF APT50GT120LRG Data sheet ( Hoja de datos )
| Número de pieza | APT50GT120LRG | |
| Descripción | Thunderbolt IGBT | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APT50GT120LR(G)
1200V, 50A, VCE(ON) = 3.2V Typical
Thunderbolt IGBT®
The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using
Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior rugged-
ness and ultrafast switching speed.
Features
• Low Forward Voltage Drop
• Low Tail Current
• RoHS Compliant
• RBSOA and SCSOA Rated
• High Frequency Switching to 50KHz
• Ultra Low Leakage Current
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel
IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
Maximum Ratings
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
Ratings
Unit
VCES
VGE
IC1
IC2
ICM
SSOA
PD
TJ, TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec.
1200
±30
94
50
150
150A @ 1200V
625
-55 to 150
300
Volts
Amps
Watts
°C
Static Electrical Characteristics
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
ICES
IGES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 3mA)
Gate Threshold Voltage (VCE = VGE, IC = 2mA, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Min Typ Max Unit
1200
-
-
4.5 5.5 6.5
Volts
2.7 3.2 3.7
- 4.0 -
- - 200 μA
- - 2.0 mA
- - 300 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
1 page  
Typical Performance Curves
5000
1000
Cies
100
Coes
Cres
10
0 100 200 300 400 500 600
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
APT50GT120B2R_LR(G)
160 www.DataSheet4U.com
140
120
100
80
60
40
20
0
0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
0.25
0. 2
D = 0.9
0.15
0.7
0.5
0. 1
Note:
t1
0.3
0.05
t2
0
10-5
0.1
0.05
10-4
SINGLE PULSE
10-3
10-2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
TJ (°C)
TC (°C)
Dissipated Power
(Watts)
0.0487
0.151
0.00909
0.389
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
120
100
80
TJ =
TC =
125°C
75°C
D = 50 %
VCE = 800V
RG = 1.0Ω
60
75°C
40
100°C
20
0
10 20 30 40
F
max
=
min
(fmax,
f
max2)
0.05
fmax1 = t d(on) + tr + td(off) + tf
fmax2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
50 60 70 80 90 100
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APT50GT120LRG.PDF ] | |
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