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Número de pieza | PBSS5160T | |
Descripción | 60V 1A PNP low VCEsat (BISS) transistor | |
Fabricantes | NXP Semiconductors | |
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DATA SHEET
book, halfpage
M3D088
PBSS5160T
60 V, 1 A
PNP low VCEsat (BISS) transistor
Product specification
Supersedes data of 2003 Jun 23
2004 May 27
1 page Philips Semiconductors
60 V, 1 A
PNP low VCEsat (BISS) transistor
wwwPr.DodautacSthsepeetc4Uifi.ccaotmion
PBSS5160T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO collector-base cut-off current
ICES collector-emitter cut-off current
IEBO emitter-base cut-off current
hFE DC current gain
VCEsat
collector-emitter saturation voltage
VBEsat
RCEsat
VBEon
fT
base-emitter saturation voltage
equivalent on-resistance
base-emitter turn-on voltage
transition frequency
Cc collector capacitance
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
MIN. TYP. MAX. UNIT
VCB = −60 V; IE = 0 A
VCB = −60 V; IE = 0 A; Tj = 150 °C
VCE = −60 V; VBE = 0 V
VEB = −5 V; IC = 0 A
VCE = −5 V; IC = −1 mA
VCE = −5 V; IC = −500 mA; note 1
VCE = −5 V; IC = −1 A; note 1
IC = −100 mA; IB = −1 mA
IC = −500 mA; IB = −50 mA
IC = −1 A; IB = −100 mA; note 1
IC = −1 A; IB = −50 mA
IC = −1 A; IB = −100 mA; note 1
VCE = −5 V; IC = −1 A
IC = −50 mA; VCE = −10 V;
f = 100 MHz
−−
−100 nA
−−
−50 µA
−−
−100 nA
−−
−100 nA
200 350 −
150 250 −
100 160 −
− −110 −160 mV
− −120 −175 mV
− −220 −330 mV
− −0.95 −1.1 V
− 220 330 mΩ
− −0.82 −0.9 V
150 220 −
MHz
VCB = −10 V; IE = Ie = 0 A; f = 1 MHz −
9
15 pF
600
handbook, halfpage
hFE
400
200
MLE124
(1)
(2)
(3)
−1.2
handbook, halfpage
VBE
(V)
−0.8
−0.4
MLE122
(1)
(2)
(3)
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4 DC current gain as a function of collector
current; typical values.
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5 Base-emitter voltage as a function of
collector current; typical values.
2004 May 27
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet PBSS5160T.PDF ] |
Número de pieza | Descripción | Fabricantes |
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PBSS5160K | 60V 1A PNP low VCEsat (BISS) transistor | NXP Semiconductors |
PBSS5160K | 60V 1A PNP low VCEsat (BISS) transistor | NXP Semiconductors |
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