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PBSS5160DS Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PBSS5160DS
Beschreibung 60V 1A PNP/PNP low VCEsat (BISS) transistor
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 14 Seiten
PBSS5160DS Datasheet, Funktion
PBSS5160DS
www.DataSheet4U.com
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
Rev. 03 — 9 October 2008
Product data sheet
1. Product profile
1.1 General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160DS.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I Dual low power switches (e.g. motors, fans)
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
RCEsat
collector-emitter voltage open base
collector current
peak collector current
collector-emitter saturation
resistance
single pulse;
tp 1 ms
IC = 1 A;
IB = 100 mA
-
[1] -
-
[2] -
- 60 V
- 1 A
- 2 A
250 330 m
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp 300 µs; δ ≤ 0.02.






PBSS5160DS Datasheet, Funktion
NXP Semiconductors
PBSS5160DSwww.DataSheet4U.com
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Per transistor
ICBO
ICES
collector-base cut-off
current
collector-emitter cut-off
current
VCB = 60 V; IE = 0 A
VCB = 60 V; IE = 0 A;
Tj = 150 °C
VCE = 60 V; VBE = 0 V
-
-
-
IEBO
emitter-base cut-off
VEB = 5 V; IC = 0 A
current
-
hFE
VCEsat
VBEsat
DC current gain
collector-emitter
saturation voltage
base-emitter saturation
voltage
VCE = 5 V; IC = 1 mA
VCE = 5 V; IC = 500 mA
VCE = 5 V; IC = 1 A
IC = 100 mA; IB = 1 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 1 A; IB = 50 mA
200
[1] 150
[1] 100
-
-
[1] -
[1] -
RCEsat
collector-emitter
IC = 1 A; IB = 100 mA
saturation resistance
[1] -
VBEon
base-emitter turn-on
voltage
IC = 1 A; VCE = 5 V
[1] -
td delay time
tr rise time
IC = 0.5 A; IBon = 25 mA;
IBoff = 25 mA
-
-
ton turn-on time
-
ts storage time
-
tf fall time
-
toff turn-off time
-
fT
transition frequency VCE = 10 V; IC = 50 mA;
150
f = 100 MHz
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
-
f = 1 MHz
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
Typ Max Unit
- 100 nA
- 50 µA
- 100 nA
- 100 nA
350 -
250 -
160 -
110 165
120 175
250 330
0.95 1.1
mV
mV
mV
V
250 330 m
0.82 0.9 V
11 -
30 -
41 -
205 -
55 -
260 -
185 -
ns
ns
ns
ns
ns
ns
MHz
9 15 pF
PBSS5160DS_3
Product data sheet
Rev. 03 — 9 October 2008
© NXP B.V. 2008. All rights reserved.
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PBSS5160DS pdf, datenblatt
NXP Semiconductors
PBSS5160DSwww.DataSheet4U.com
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
12. Revision history
Table 9. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
PBSS5160DS_3
Modifications:
20081009
Product data sheet
-
PBSS5160DS_2
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Figure 9: amended
Section 13 “Legal information”: updated
PBSS5160DS_2
20050628
Product data sheet
-
PBSS5160DS_1
PBSS5160DS_1
20040716
Objective data sheet
-
-
PBSS5160DS_3
Product data sheet
Rev. 03 — 9 October 2008
© NXP B.V. 2008. All rights reserved.
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