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PDF APT11044B2FLL Data sheet ( Hoja de datos )
| Número de pieza | APT11044B2FLL | |
| Descripción | POWER MOS 7 FREDFET | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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APT11044B2FLL
APT11044LFLLwww.DataSheet4U.com
1100V 26A 0.440Ω
POWER MOS 7 R FREDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed
and Qg. Power MOS
with Power MOS 7® by significantly lowering
7® combines lower conduction and switching
RDS(ON)
losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
T-MAX™
TO-264
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
• FAST RECOVERY BODY DIODE
D
G
S
MAXIMUM RATINGS
Symbol Parameter
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
PD Total Power Dissipation @ TC = 25°C
Linear Derating Factor
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
STATIC ELECTRICAL CHARACTERISTICS
All Ratings: TC = 25°C unless otherwise specified.
APT11044JFLL
UNIT
1100
Volts
26
Amps
104
±30
Volts
±40
694 Watts
5.56 W/°C
-55 to 150
300
26
°C
Amps
50
3000
mJ
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, 13A)
1100
0.440
IDSS Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125°C)
250
1000
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
35
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Ohms
µA
nA
Volts
1 page  
Typical Performance Curves
10 %
t
d(on)
tr
90%
5 % 10 %
Switching Energy
Gate Voltage
TJ = 125 C
Drain Current
5%
Drain Voltage
Figure 18, Turn-on Switching Waveforms and Definitions
VDD
APT30DF120
IC VCE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
APT11044B2FLL - LFLL
90%
www.DataSheet4U.com
td(off)
90%
Gate Voltage
TJ = 125 C
Drain Voltage
tf
Switching Energy
10%
0
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
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