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PBSS5160K Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PBSS5160K
Beschreibung 60V 1A PNP low VCEsat (BISS) transistor
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 14 Seiten
PBSS5160K Datasheet, Funktion
PBSS5160K
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03 — 6 October 2008
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small
SOT346 (SC-59A) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160K.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I High voltage DC-to-DC conversion
I High voltage MOSFET gate driving
I High voltage motor control
I High voltage power switches (e.g. motors, fans)
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
RCEsat
collector-emitter voltage open base
collector current
peak collector current
collector-emitter saturation
resistance
single pulse;
tp 1 ms
IC = 1 A;
IB = 100 mA
-
[1] -
-
[2] -
- 60 V
- 1 A
- 2 A
255 340 m
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp 300 µs; δ ≤ 0.02.






PBSS5160K Datasheet, Funktion
NXP Semiconductors
PBSS5160Kwww.DataSheet4U.com
60 V, 1 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
ICES
collector-base cut-off
current
collector-emitter cut-off
current
VCB = 60 V; IE = 0 A
VCB = 60 V; IE = 0 A;
Tj = 150 °C
VCE = 60 V; VBE = 0 V
IEBO
emitter-base cut-off
VEB = 5 V; IC = 0 A
current
hFE
VCEsat
VBEsat
DC current gain
collector-emitter
saturation voltage
base-emitter saturation
voltage
VCE = 5 V; IC = 1 mA
VCE = 5 V; IC = 500 mA
VCE = 5 V; IC = 1 A
IC = 100 mA; IB = 1 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 1 A; IB = 50 mA
RCEsat
collector-emitter
IC = 1 A; IB = 100 mA
saturation resistance
VBEon
base-emitter turn-on
voltage
IC = 1 A; VCE = 5 V
td delay time
tr rise time
IC = 0.5 A; IBon = 25 mA;
IBoff = 25 mA
ton turn-on time
ts storage time
tf fall time
toff turn-off time
fT transition frequency VCE = 10 V; IC = 50 mA;
f = 100 MHz
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
Min
-
-
-
-
200
[1] 150
[1] 100
-
-
[1] -
-
[1] -
-
-
-
-
-
-
-
150
-
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
Typ Max Unit
- 100 nA
- 50 µA
- 100 nA
- 100 nA
350 -
250 -
160 -
110 175
135 180
255 340
0.95 1.1
mV
mV
mV
V
255 340 m
0.82 0.9 V
11 -
30 -
41 -
205 -
55 -
260 -
185 -
ns
ns
ns
ns
ns
ns
MHz
9 15 pF
PBSS5160K_3
Product data sheet
Rev. 03 — 6 October 2008
© NXP B.V. 2008. All rights reserved.
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PBSS5160K pdf, datenblatt
NXP Semiconductors
PBSS5160Kwww.DataSheet4U.com
60 V, 1 A PNP low VCEsat (BISS) transistor
12. Revision history
Table 9. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
PBSS5160K_3
Modifications:
20081006
Product data sheet
-
PBSS5160K_2
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Figure 9: amended
Section 13 “Legal information”: updated
PBSS5160K_2
20050630
Product data sheet
-
PBSS5160K_1
PBSS5160K_1
20040624
Objective data sheet
-
-
PBSS5160K_3
Product data sheet
Rev. 03 — 6 October 2008
© NXP B.V. 2008. All rights reserved.
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