Datenblatt-pdf.com


EN29SL160 Schematic ( PDF Datasheet ) - Eon Silicon Solution

Teilenummer EN29SL160
Beschreibung 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory
Hersteller Eon Silicon Solution
Logo Eon Silicon Solution Logo 




Gesamt 30 Seiten
EN29SL160 Datasheet, Funktion
www.DataSheet4U.com
EN29SL160
EN29SL160
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 1.8 Volt-only
FEATURES
Single power supply operation
- Full voltage range:1.65-2.2 volt for read and
write operations.
- Regulated voltage range: 1.8-2.2 volt read
and write operations
High performance
- Access times as fast as 90 ns
Low power consumption (typical values
at 5 MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 0.2 μA typical standby current
Flexible Sector Architecture:
- Eight 8-Kbyte and thirty-one 64-Kbyte sectors
(byte mode)
- Eight 4-Kword and thirty-one 32-Kword
sectors (word mode)
WP#/ACC Input pin:
- Write protect (WP#) function allows protection
of two outermost boot sectors, regardless of
sector protect status
- Acceleration (ACC) function acceleration
program timing.
Sector protection:
- Hardware locking of sectors to prevent
program or erase operations within individual
sectors
- Additionally, temporary Sector Unprotect
allows code changes in previously locked
sectors.
High performance program/erase speed
- Byte/Word program time: 5µs/7µs typical
- Sector erase time: 500ms typical
JEDEC Standard Embedded Erase and
Program Algorithms
JEDEC standard DATA# polling and toggle
bits feature
Unlock Bypass Program command supported
Single Sector and Chip Erase
Sector Unprotect Mode
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
Low Vcc write inhibit < 1.2V
Minimum 100K endurance cycle
Package Options
- 48-pin TSOP (Type 1)
- 48-ball 6mm x 8mm TFBGA
- 48-ball 5mm x 6mm WFBGA
- 48-ball 5mm x 6mm WLGA
Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN29SL160 is an 16-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 5µs.
The EN29SL160 features 1.8V voltage read and write operation, with access time as fast as 90ns to
eliminate the need for WAIT statements in high-performance microprocessor systems.
The EN29SL160 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full chip erase operation, where each sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
100K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09






EN29SL160 Datasheet, Funktion
www.DataSheet4U.com
EN29SL160
Sector
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
SA38
Table 3. Bottom Boot Sector Address Tables (EN29SL160B)
Sector Size Address Range (in hexadecimal)
(Kbytes/
A19 A18 A17 A16 A15 A14 A13 A12 Kwords)
Word
Byte mode (x8) Mode(x16)
00000000
8/4 000000–001FFF 00000–00FFF
00000001
8/4 002000–003FFF 01000–01FFF
00000010
8/4 004000–005FFF 02000–02FFF
00000011
8/4 006000–007FFF 03000–03FFF
00000100
8/4 008000–009FFF 04000–04FFF
00000101
8/4 00A000–00BFFF 05000–05FFF
00000110
8/4 00C000–00DFFF 06000–06FFF
00000111
8/4 00E000–00FFFF 07000–07FFF
0 0 0 0 1XXX
64/32
010000–01FFFF 08000–0FFFF
0 0 0 1 0XXX
64/32
020000–02FFFF 10000–17FFF
0 0 0 1 1XXX
64/32
030000–03FFFF 18000–1FFFF
0 0 1 0 0XXX
64/32
040000–04FFFF 20000–27FFF
0 0 1 0 1XXX
64/32
050000–05FFFF 28000–2FFFF
0 0 1 1 0XXX
64/32
060000–06FFFF 30000–37FFF
0 0 1 1 1XXX
64/32
070000–07FFFF 38000–3FFFF
0 1 0 0 0XXX
64/32
080000–08FFFF 40000–47FFF
0 1 0 0 1XXX
64/32
090000–09FFFF 48000–4FFFF
0 1 0 1 0XXX
64/32
0A0000–0AFFFF 50000–57FFF
0 1 0 1 1XXX
64/32
0B0000–0BFFFF 58000–5FFFF
0 1 1 0 0XXX
64/32
0C0000–0CFFFF 60000–67FFF
0 1 1 0 1XXX
64/32
0D0000–0DFFFF 68000–6FFFF
0 1 1 1 0XXX
64/32
0E0000–0EFFFF 70000–77FFF
0 1 1 1 1XXX
64/32
0F0000–0FFFFF 78000–7FFFF
1 0 0 0 0XXX
64/32
100000–10FFFF 80000–87FFF
1 0 0 0 1XXX
64/32
110000–11FFFF 88000–8FFFF
1 0 0 1 0XXX
64/32
120000–12FFFF 90000–97FFF
1 0 0 1 1XXX
64/32
130000–13FFFF 98000–9FFFF
1 0 1 0 0XXX
64/32
140000–14FFFF A0000–A7FFF
1 0 1 0 1XXX
64/32
150000–15FFFF A8000–AFFFF
1 0 1 1 0XXX
64/32
160000–16FFFF B0000–B7FFF
1 0 1 1 1XXX
64/32
170000–17FFFF B8000–BFFFF
1 1 0 0 0XXX
64/32
180000–18FFFF C0000–C7FFF
1 1 0 0 1XXX
64/32
190000–19FFFF C8000–CFFFF
1 1 0 1 0XXX
64/32
1A0000–1AFFFF D0000–D7FFF
1 1 0 1 1XXX
64/32
1B0000–1BFFFF D8000–DFFFF
1 1 1 0 0XXX
64/32
1C0000–1CFFFF E0000–E7FFF
1 1 1 0 1XXX
64/32
1D0000–1DFFFF E8000–EFFFF
1 1 1 1 0XXX
64/32
1E0000–1EFFFF F0000–F7FFF
1 1 1 1 1XXX
64/32
1F0000–1FFFFF F8000–FFFFF
This Data Sheet may be revised by subsequent versions
6
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09

6 Page









EN29SL160 pdf, datenblatt
Write Protect / Accelerated Program (WP# / ACC)
www.DataSheet4U.com
EN29SL160
The WP#/ACC pin provides two functions. The Write Protect (WP#) function provides a hardware
method of protecting the outermost two 8K-byte Boot Sector. The ACC function allows faster
manufacturing throughput at the factory, using an external high voltage.
When WP#/ACC is Low, the device protects the outermost two 8K-byte Boot Sector; no matter the
sectors are protected or unprotected using the method described in “Sector/Sector Group Protection
& Chip Unprotection”, Program and Erase operations in these sectors are ignored.
When WP#/ACC is High, the device reverts to the previous protection status of the outermost two
8K-byte boot sector. Program and Erase operations can now modify the data in the two outermost
8K-byte Boot Sector unless the sector is protected using Sector Protection.
When WP#/ACC is raised to VHH the memory automatically enters the Unlock Bypass mode(please
refer to “Command Definitions”), temporarily unprotects every protected sectors, and reduces the
time required for program operation. The system would use a two-cycle program command
sequence as required by the Unlock Bypass mode. When WP#/ACC returns to VIH or VIL, normal
operation resumes. The transitions from VIH or VIL to VHH and from VHH to VIH or VIL must be slower
than tBVHHB, see Figure 11.
Note that the WP#/ACC pin must not be left floating or unconnected. In addition, WP#/ACC pin must
not be at VHH for operations other than accelerated programming. It could cause the device to be
damaged.
Never raise this pin to VHH from any mode except Read mode, otherwise the memory may be left in
an indeterminate state.
A 0.1µF capacitor should be connected between the WP#/ACC pin and the VSS Ground pin to
decouple the current surges from the power supply. The PCB track widths must be sufficient to carry
the currents required during Unlock Bypass Program.
Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected
sector groups to change data while in-system. The Sector
Unprotect mode is activated by setting the RESET# pin to VID.
During this mode, formerly protected sectors can be programmed
or erased by simply selecting the sector addresses. Once is
removed from the RESET# pin, all the previously protected sectors
are protected again. See accompanying figure and timing
diagrams for more details.
Notes:
1. All protected sectors unprotected.
2. Previously protected sectors protected
again.
Start
Reset#=VID (note 1)
Perform Erase or Program
Operations
Reset#=VIH
Temporary Sector
Unprotect Completed (note 2)
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically
enables this mode when addresses remain stable for tacc + 30ns. The automatic sleep mode is
independent of the CE#, WE# and OE# control signals. Standard address access timings provide
new data when addresses are changed. While in sleep mode, output is latched and always available
to the system. Icc5 in the DC Characteristics table represents the automatic sleep mode current
specification.
This Data Sheet may be revised by subsequent versions 12 ©2004 Eon Silicon Solution, Inc., www.eonssi.com
or modifications due to changes in technical specifications.
Rev. G, Issue Date: 2008/09/09

12 Page





SeitenGesamt 30 Seiten
PDF Download[ EN29SL160 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
EN29SL16016 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash MemoryEon Silicon Solution
Eon Silicon Solution

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche