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EN29SL400 Schematic ( PDF Datasheet ) - Eon Silicon Solution

Teilenummer EN29SL400
Beschreibung 4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory CMOS 1.8 Volt-only
Hersteller Eon Silicon Solution
Logo Eon Silicon Solution Logo 




Gesamt 30 Seiten
EN29SL400 Datasheet, Funktion
www.DataSheet4U.com
EN29SL400
EN29SL400
4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 1.8 Volt-only
FEATURES
Single power supply operation
- Full voltage range:1.65-2.2 volt for read and
write operations.
- Ideal for battery-powered applications.
High performance
- Access times as fast as 70 ns
Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 0.2 µA typical standby current
Flexible Sector Architecture:
- One 16 K-byte, two 8 K-byte, one 32 K-byte,
and seven 64 K-byte sectors (byte mode)
- One 8 K-word, two 4 K-word, one 16 K-word
and seven 32 K-word sectors (word mode)
Sector protection:
- Hardware locking of sectors to prevent
program or erase operations within individual
sectors
- Additionally, temporary Sector Unprotect
allows code changes in previously locked
sectors.
High performance program/erase speed
- Byte/Word program time: 5µs/7µs typical
- Sector erase time: 500ms typical
JEDEC Standard Embedded Erase and
Program Algorithms
JEDEC standard DATA# polling and toggle
bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
Triple-metal double-poly triple-well COMS Flash
Technology
Low Vcc write inhibit < 1.2V
Minimum 100K endurance cycle
Package Options
- 48-pin TSOP (Type 1)
- 48-ball 6mm x 8mm FBGA
Commercial and Industrial Temperature
Range
GENERAL DESCRIPTION
The EN29SL400 is an 4-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 524,288 bytes or 262144 words. Any byte can be programmed typically in 5µs. The
EN29SL400 features 1.8V voltage read and write operation, with access time as fast as 70ns to
eliminate the need for WAIT statements in high-performance microprocessor systems.
The EN29SL400 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full chip erase operation, where each sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
100K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2006/04/14






EN29SL400 Datasheet, Funktion
www.DataSheet4U.com
EN29SL400
BLOCK DIAGRAM
RY/BY#
Vcc
Vss
WE#
State
Control
Command
Register
CE#
OE#
Vcc Detector
A0-A17
Block Protect Switches
Erase Voltage Generator
DQ0-DQ15 (A-1)
Input/Output Buffers
Program Voltage
Generator
Chip Enable
Output Enable
Logic
STB
Data Latch
Timer
Y-Decoder
STB
X-Decoder
Y-Gating
Cell Matrix
This Data Sheet may be revised by subsequent versions
6
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2006/04/14

6 Page









EN29SL400 pdf, datenblatt
www.DataSheet4U.com
EN29SL400
The Reset command must be issued to re-enable the device for reading array data if DQ5 goes high,
or while in the autoselect mode. See next section for details on Reset.
Reset Command
Writing the reset command to the device resets the device to reading array data. Address bits are
don’t-care for this command.
The reset command may be written between the sequence cycles in an erase command sequence
before erasing begins. This resets the device to reading array data. Once erasure begins, however,
the device ignores reset commands until the operation is complete. The reset command may be
written between the sequence cycles in a program command sequence before programming begins.
This resets the device to reading array data (also applies to programming in Erase Suspend mode).
Once programming begins, however, the device ignores reset commands until the operation is
complete.
The reset command may be written between the sequence cycles in an autoselect command
sequence. Once in the autoselect mode, the reset command must be written to return to reading
array data (also applies to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation, writing the reset command returns the device
to reading array data (also applies during Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and devices
codes, and determine whether or not a sector is protected. The Command Definitions table shows
the address and data requirements. This is an alternative to the method that requires VID on
address bit A9 and is intended for PROM programmers.
Two unlock cycles followed by the autoselect command initiate the autoselect command sequence.
Autoselect mode is then entered and the system may read at addresses shown in Table 4 any
number of times, without needing another command sequence.
The system must write the reset command to exit the autoselect mode and return to reading array
data.
Word / Byte Programming Command
The device may be programmed by byte or by word, depending on the state of the Byte# Pin.
Programming the EN29SL400 is performed by using a four bus-cycle operation (two unlock write
cycles followed by the Program Setup command and Program Data Write cycle). When the program
command is executed, no additional CPU controls or timings are necessary. An internal timer
terminates the program operation automatically. Address is latched on the falling edge of CE# or
WE#, whichever is last; data is latched on the rising edge of CE# or WE#, whichever is first.
Programming status may be checked by sampling data on DQ7 (DATA# polling) or on DQ6 (toggle
bit). When the program operation is successfully completed, the device returns to read mode and
the user can read the data programmed to the device at that address. Note that data can not be
programmed from a 0 to a 1. Only an erase operation can change a data from 0 to 1. When
programming time limit is exceeded, DQ5 will produce a logical “1” and a Reset command can
return the device to Read mode.
This Data Sheet may be revised by subsequent versions 12 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2006/04/14

12 Page





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