|
|
PDF EBE51RD8AEFA Data sheet ( Hoja de datos )
| Número de pieza | EBE51RD8AEFA | |
| Descripción | 512MB Registered DDR2 SDRAM DIMM | |
| Fabricantes | Elpida Memory | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EBE51RD8AEFA (archivo pdf) en la parte inferior de esta página. Total 22 Páginas | ||
|
No Preview Available !
DATA SHEET
www.DataSheet4U.com
512MB Registered DDR2 SDRAM DIMM
EBE51RD8AEFA (64M words × 72 bits, 1 Rank)
Description
Features
The EBE51RD8AEFA is a 64M words × 72 bits, 1 rank
DDR2 SDRAM Module, mounting 9 pieces of DDR2
SDRAM sealed in FBGA (µBGA) package. Read and
write operations are performed at the cross points of
the CK and the /CK. This high-speed data transfer is
realized by the 4bits prefetch-pipelined architecture.
Data strobe (DQS and /DQS) both for read and write
are available for high speed and reliable data bus
design. By setting extended mode register, the on-chip
Delay Locked Loop (DLL) can be set enable or disable.
This module provides high density mounting without
utilizing surface mount technology. Decoupling
capacitors are mounted beside each FBGA (µBGA) on
the module board.
Note: Do not push the components or drop the
modules in order to avoid mechanical defects,
which may result in electrical defects.
• 240-pin socket type dual in line memory module
(DIMM)
PCB height: 30.0mm
Lead pitch: 1.0mm
Lead-free
• Power supply: VDD, VDDQ = 1.8V ± 0.1V
• Data rate: 533Mbps/400Mbps (max.)
• SSTL_18 compatible I/O
• Double-data-rate architecture: two data transfers per
clock cycle
• Bi-directional, data strobe (DQS and /DQS) is
transmitted /received with data, to be used in
capturing data at the receiver
• DQS is edge aligned with data for READs; center
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
referenced to both edges of DQS
• Four internal banks for concurrent operation
(components)
• Data mask (DM) for write data
• Burst length: 4, 8
• /CAS latency (CL): 3, 4, 5
• Auto precharge option for each burst access
• Auto refresh and self refresh modes
• Average refresh period
7.8µs at 0°C ≤ TC ≤ +85°C
3.9µs at +85°C < TC ≤ +95°C
• Posted CAS by programmable additive latency for
better command and data bus efficiency
• Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
• /DQS can be disabled for single-ended Data Strobe
operation
• 1 piece of PLL clock driver, 1 pieces of register driver
and 1 piece of serial EEPROM (2k bits EEPROM) for
Presence Detect (PD)
Document No. E0645E30 (Ver. 3.0)
Date Published April 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2005
1 page  
EBE51RD8AEFA
Serial PD Matrix*1
www.DataSheet4U.com
Byte No.
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value
Number of bytes utilized by module
manufacturer
1
0
0
0
0
0
0
0
80H
Total number of bytes in serial PD
device
0 0 0 0 1 0 0 0 08H
Memory type
0 0 0 0 1 0 0 0 08H
Number of row address
0 0 0 0 1 1 1 0 0EH
Number of column address
0 0 0 0 1 0 1 0 0AH
Number of DIMM ranks
0 1 1 0 0 0 0 0 60H
Module data width
0 1 0 0 1 0 0 0 48H
Module data width continuation
0 0 0 0 0 0 0 0 00H
Voltage interface level of this assembly 0 0 0 0 0 1 0 1 05H
DDR SDRAM cycle time, CL = 5
-5C
0 0 1 1 1 1 0 1 3DH
-4A 0 1 0 1 0 0 0 0 50H
SDRAM access from clock (tAC)
-5C
0 1 0 1 0 0 0 0 50H
-4A 0 1 1 0 0 0 0 0 60H
DIMM configuration type
0 0 0 0 0 0 1 0 02H
Refresh rate/type
1 0 0 0 0 0 1 0 82H
Primary SDRAM width
0 0 0 0 1 0 0 0 08H
Error checking SDRAM width
0 0 0 0 1 0 0 0 08H
Reserved
0 0 0 0 0 0 0 0 00H
SDRAM device attributes:
Burst length supported
0 0 0 0 1 1 0 0 0CH
SDRAM device attributes: Number of
banks on SDRAM device
0
0
0
0
0
1
0
0
04H
SDRAM device attributes:
/CAS latency
0 0 1 1 1 0 0 0 38H
Reserved
0 0 0 0 0 0 0 0 00H
DIMM type information
0 0 0 0 0 0 0 1 01H
SDRAM module attributes
0 0 0 0 0 0 0 0 00H
SDRAM device attributes: General 0 0 0 0 0 0 0 1 01H
Minimum clock cycle time at CL = 4
0 0 1 1 1 1 0 1 3DH
-5C
-4A 0 1 0 1 0 0 0 0 50H
Maximum data access time (tAC) from
clock at CL = 4
0 1 0 1 0 0 0 0 50H
-5C
-4A 0 1 1 0 0 0 0 0 60H
Minimum clock cycle time at CL = 3
0 1 0 1 0 0 0 0 50H
-5C, -4A
Maximum data access time (tAC) from
clock at CL = 3
0 1 1 0 0 0 0 0 60H
-5C, -4A
Comments
128 bytes
256 bytes
DDR2 SDRAM
14
10
1
72
0
SSTL 1.8V
3.75ns*1
5.0ns*1
0.5ns*1
0.6ns*1
ECC
7.8µs
×8
×8
0
4,8
4
3, 4, 5
0
Registered
Normal
Weak Driver
3.75ns*1
5.0ns*1
0.5ns*1
0.6ns*1
5.0ns*1
0.6ns*1
Data Sheet E0645E30 (Ver. 3.0)
5
5 Page 
EBE51RD8AEFA
DC Characteristics 1 (TC = 0°C to +85°C, VDD = 1.8V ± 0.1V, VSS = 0V)
www.DataSheet4U.com
Parameter
Operating current
(ACT-PRE)
Symbol Grade
IDD0
-5C
-4A
max.
1480
1310
Operating current
(ACT-READ-PRE)
IDD1
-5C
-4A
1680
1470
Precharge power-down
standby current
IDD2P -5C
-4A
Precharge quiet standby
current
-5C
IDD2Q -4A
Idle standby current
-5C
IDD2N
-4A
Active power-down
standby current
-5C
IDD3P-F
-4A
IDD3P-S -5C
-4A
580
500
720
610
760
660
850
750
720
610
Active standby current
-5C
IDD3N -4A
1100
990
Operating current
(Burst read operating)
-5C
IDD4R -4A
2270
1830
Operating current
(Burst write operating)
-5C
IDD4W
-4A
2270
1830
Unit Test condition
one bank; tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD);
mA CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
one bank; IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRC = tRC (IDD),
mA tRAS = tRAS min.(IDD); tRCD = tRCD (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks idle;
tCK = tCK (IDD);
mA CKE is L;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
mA CKE is H, /CS is H;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);CKE is H, /CS is H;
mA Other control and address bus inputs are
SWITCHING;
Data bus inputs are SWITCHING
all banks open;
mA tCK = tCK (IDD);
CKE is L;
Fast PDN Exit
MRS(12) = 0
Other control and
address bus inputs are
STABLE;
mA Data bus inputs are
Slow PDN Exit
MRS(12) = 1
FLOATING
all banks open;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
tRP = tRP (IDD);
mA CKE is H, /CS is H between valid commands;
Other control and address bus inputs are
SWITCHING;
Data bus inputs are SWITCHING
all banks open, continuous burst reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
mA tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks open, continuous burst writes;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
mA tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Data Sheet E0645E30 (Ver. 3.0)
11
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet EBE51RD8AEFA.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EBE51RD8AEFA | 512MB Registered DDR2 SDRAM DIMM | Elpida Memory |
| EBE51RD8AEFA-6 | 512MB Registered DDR2 SDRAM DIMM | Elpida Memory |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |