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Teilenummer | EBE51ED8AJWA |
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Beschreibung | 512MB Unbuffered DDR2 SDRAM DIMM | |
Hersteller | Elpida Memory | |
Logo | ||
Gesamt 29 Seiten DATA SHEET
www.DataSheet4U.com
512MB Unbuffered DDR2 SDRAM DIMM
EBE51ED8AJWA (64M words × 72 bits, 1 Rank)
Specifications
• Density: 512MB
• Organization
64M words × 72 bits, 1 rank
• Mounting 9 pieces of 512M bits DDR2 SDRAM
sealed in FBGA
• Package: 240-pin socket type dual in line memory
module (DIMM)
PCB height: 30.0mm
Lead pitch: 1.0mm
Lead-free (RoHS compliant)
• Power supply: VDD = 1.8V ± 0.1V
• Data rate: 800Mbps/667Mbps (max.)
• Four internal banks for concurrent operation
(components)
• Interface: SSTL_18
• Burst lengths (BL): 4, 8
• /CAS Latency (CL): 3, 4, 5, 6
• Precharge: auto precharge option for each burst
access
• Refresh: auto-refresh, self-refresh
• Refresh cycles: 8192 cycles/64ms
Average refresh period
7.8µs at 0°C ≤ TC ≤ +85°C
3.9µs at +85°C < TC ≤ +95°C
• Operating case temperature range
TC = 0°C to +95°C
Features
• Double-data-rate architecture; two data transfers per
clock cycle
• The high-speed data transfer is realized by the 4 bits
prefetch pipelined architecture
• Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
• DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
• Data mask (DM) for write data
• Posted /CAS by programmable additive latency for
better command and data bus efficiency
• Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
• /DQS can be disabled for single-ended Data Strobe
operation
Document No. E1056E30 (Ver. 3.0)
Date Published April 2008 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2007-2008
EBE51ED8AJWA
www.DataSheet4U.com
Byte No.
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47 to 61
Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments
Maximum data access time (tAC) from
clock at CL = X − 2
0 1 1 0 0 0 0 0 60H
-8E, -6E (CL = 3)
-8G (CL = 4)
0 1 0 1 0 0 0 0 50H
0.6ns*1
0.5ns*1
Minimum row precharge time (tRP)
-8E
0 0 1 1 0 0 1 0 32H
12.5ns
-8G, -6E
0 0 1 1 1 1 0 0 3CH
15ns
Minimum row active to row active delay
(tRRD)
0
0
0
1
1
1
1
0
1EH
Minimum /RAS to /CAS delay (tRCD)
-8E
0
0
1
1
0
0
1
0
32H
7.5ns
12.5ns
-8G, -6E
0 0 1 1 1 1 0 0 3CH
15ns
Minimum active to precharge time
(tRAS)
0 0 1 0 1 1 0 1 2DH
45ns
Module rank density
1 0 0 0 0 0 0 0 80H
512M bytes
Address and command setup time
before clock (tIS)
-8E, -8G
-6E
0 0 0 1 0 1 1 1 17H
0 0 1 0 0 0 0 0 20H
0.17ns*1
0.20ns*1
Address and command hold time after
clock (tIH)
0 0 1 0 0 1 0 1 25H
-8E, -8G
-6E 0 0 1 0 0 1 1 1 27H
0.25ns*1
0.27ns*1
Data input setup time before clock
(tDS)
-8E, -8G
-6E
0 0 0 0 0 1 0 1 05H
0 0 0 1 0 0 0 0 10H
0.05ns*1
0.10ns*1
Data input hold time after clock (tDH)
-8E, -8G
0
0
0
1
0
0
1
0
12H
-6E 0 0 0 1 0 1 1 1 17H
Write recovery time (tWR)
0 0 1 1 1 1 0 0 3CH
0.12ns*1
0.17ns*1
15ns*1
Internal write to read command delay
(tWTR)
0
0
0
1
1
1
1
0
1EH
Internal read to precharge command
delay (tRTP)
0
0
0
1
1
1
1
0
1EH
7.5ns*1
7.5ns*1
Memory analysis probe characteristics 0 0 0 0 0 0 0 0 00H
TBD
Extension of Byte 41 and 42
-8E
0 0 1 1 0 0 0 0 30H
-8G, -6E
0 0 0 0 0 0 0 0 00H
Undefined
Active command period (tRC)
-8E
-8G, -6E
0 0 1 1 1 0 0 1 39H
0 0 1 1 1 1 0 0 3CH
57.5ns*1
60ns*1
Auto refresh to active/
Auto refresh command cycle (tRFC)
0
1
1
0
1
0
0
1
69H
SDRAM tCK cycle max. (tCK max.) 1 0 0 0 0 0 0 0 80H
105ns*1
8ns*1
Dout to DQS skew
-8E, -8G
-6E
0 0 0 1 0 1 0 0 14H
0 0 0 1 1 0 0 0 18H
0.20ns*1
0.24ns*1
Data hold skew (tQHS)
-8E, -8G
-6E
0 0 0 1 1 1 1 0 1EH
0 0 1 0 0 0 1 0 22H
0.30ns*1
0.34ns*1
PLL relock time
0 0 0 0 0 0 0 0 00H
Undefined
0 0 0 0 0 0 0 0 00H
Data Sheet E1056E30 (Ver. 3.0)
6
6 Page EBE51ED8AJWA
DC Characteristics 1 (TC = 0°C to +85°C, VDD = 1.8V ± 0.1V, VSS = 0V)
www.DataSheet4U.com
Parameter
Operating current
(ACT-PRE)
Symbol Grade
max.
IDD0
-8E, -8G 495
-6E 450
Operating current
(ACT-READ-PRE)
IDD1
-8E, -8G 585
-6E 540
Precharge power-down
standby current
IDD2P
Precharge quiet standby
current
IDD2Q
90
135
Idle standby current
IDD2N
180
Active power-down
standby current
IDD3P-F
IDD3P-S
135
108
Active standby current IDD3N
-8E, -8G 360
-6E 315
Operating current
IDD4R
(Burst read operating)
-8E, -8G 1125
-6E 990
Operating current
(Burst write operating) IDD4W
-8E, -8G 1080
-6E 945
Unit Test condition
one bank; tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD);
mA CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
one bank; IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRC = tRC (IDD),
mA tRAS = tRAS min.(IDD); tRCD = tRCD (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks idle;
tCK = tCK (IDD);
mA CKE is L;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
mA CKE is H, /CS is H;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
mA CKE is H, /CS is H;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
all banks open;
mA tCK = tCK (IDD);
CKE is L;
Fast PDN Exit
MRS(12) = 0
Other control and address bus
mA
inputs are STABLE;
Slow PDN Exit
Data bus inputs are FLOATING MRS(12) = 1
all banks open;
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
mA CKE is H, /CS is H between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
all banks open, continuous burst reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
mA
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks open, continuous burst writes;
BL = 4, CL = CL(IDD), AL = 0;
mA
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Data Sheet E1056E30 (Ver. 3.0)
12
12 Page | ||
Seiten | Gesamt 29 Seiten | |
PDF Download | [ EBE51ED8AJWA Schematic.PDF ] |
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