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PDF EBE26UC6AASA Data sheet ( Hoja de datos )
| Número de pieza | EBE26UC6AASA | |
| Descripción | 256MB DDR2 SDRAM SO-DIMM | |
| Fabricantes | Elpida Memory | |
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PRELIMINARY DATA SHEET
www.DataSheet4U.com
256MB DDR2 SDRAM SO-DIMM
EBE26UC6AASA (32M words × 64 bits, 2 Ranks)
Description
The EBE26UC6AASA is 32M words × 64 bits, 2 ranks
DDR2 SDRAM Small Outline Dual In-line Memory
Module, mounting 8 pieces of 256M bits DDR2
SDRAM sealed in FBGA package. Read and write
operations are performed at the cross points of the CK
and the /CK. This high-speed data transfer is realized
by the 4 bits prefetch-pipelined architecture. Data
strobe (DQS and /DQS) both for read and write are
available for high speed and reliable data bus design.
By setting extended mode register, the on-chip Delay
Locked Loop (DLL) can be set enable or disable. This
module provides high density mounting without utilizing
surface mount technology. Decoupling capacitors are
mounted beside each FBGA on the module board.
Note: Do not push the components or drop the
modules in order to avoid mechanical defects,
which may result in electrical defects.
Features
• 200-pin socket type small outline dual in line memory
module (SO-DIMM)
PCB height: 30.0mm
Lead pitch: 0.6mm
Lead-free
• 1.8V power supply
• Data rate: 533Mbps/400Mbps (max.)
• 1.8V (SSTL_18 compatible) I/O
• Double-data-rate architecture: two data transfers per
clock cycle
• Bi-directional, differential data strobe (DQS and
/DQS) is transmitted/received with data, to be used in
capturing data at the receiver
• DQS is edge aligned with data for READs: center-
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge: data
and data mask referenced to both edges of DQS
• Four internal banks for concurrent operation
(Component)
• Data mask (DM) for write data
• Burst lengths: 4, 8
• /CAS Latency (CL): 3, 4, 5
• Auto precharge operation for each burst access
• Auto refresh and self refresh modes
• 7.8µs average periodic refresh interval
• Posted CAS by programmable additive latency for
better command and data bus efficiency
• Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
• /DQS can be disabled for single-ended Data Strobe
operation.
Document No. E0464E11 (Ver. 1.1) This product became EOL in April, 2005.
Date Published February 2006 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2004-2006
1 page  
EBE26UC6AASA
Serial PD Matrix
www.DataSheet4U.com
Byte No.
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value
Number of bytes utilized by module
manufacturer
1
0
0
0
0
0
0
0
80H
Total number of bytes in serial PD
device
0 0 0 0 1 0 0 0 08H
Memory type
0 0 0 0 1 0 0 0 08H
Number of row address
0 0 0 0 1 1 0 1 0DH
Number of column address
0 0 0 0 1 0 0 1 09H
Number of DIMM ranks
0 1 1 0 0 0 0 1 61H
Module data width
0 1 0 0 0 0 0 0 40H
Module data width continuation
0 0 0 0 0 0 0 0 00H
Voltage interface level of this assembly 0 0 0 0 0 1 0 1 05H
DDR SDRAM cycle time, CL = 5
-5C
0 0 1 1 1 1 0 1 3DH
-4A, -4C
0 1 0 1 0 0 0 0 50H
SDRAM access from clock (tAC)
-5C
0 1 0 1 0 0 0 0 50H
-4A, -4C
0 1 1 0 0 0 0 0 60H
DIMM configuration type
0 0 0 0 0 0 0 0 00H
Refresh rate/type
1 0 0 0 0 0 1 0 82H
Primary SDRAM width
0 0 0 1 0 0 0 0 10H
Error checking SDRAM width
0 0 0 0 0 0 0 0 00H
Reserved
0 0 0 0 0 0 0 0 00H
SDRAM device attributes:
Burst length supported
0 0 0 0 1 1 0 0 0CH
SDRAM device attributes: Number of
banks on SDRAM device
0
0
0
0
0
1
0
0
04H
SDRAM device attributes:
/CAS latency
0 0 1 1 1 0 0 0 38H
Reserved
0 0 0 0 0 0 0 0 00H
DIMM type information
0 0 0 0 0 1 0 0 04H
SDRAM module attributes
0 0 0 0 0 0 0 0 00H
SDRAM device attributes: General 0 0 1 1 0 0 0 0 30H
Minimum clock cycle time at CL = 4
-5C
0
0
1
1
1
1
0
1
3DH
-4A, -4C
0 1 0 1 0 0 0 0 50H
Maximum data access time (tAC) from
clock at CL = 4
0 1 0 1 0 0 0 0 50H
-5C
-4A, -4C
0 1 1 0 0 0 0 0 60H
Minimum clock cycle time at CL = 3
-5C, -4A
0
1
0
1
0
0
0
0
50H
-4C 1 1 1 1 1 1 1 1 FFH
Maximum data access time (tAC) from
clock at CL = 3
0 1 1 0 0 0 0 0 60H
-5C, -4A
-4C 1 1 1 1 1 1 1 1 FFH
Comments
128 bytes
256 bytes
DDR2 SDRAM
13
9
2
64
0
SSTL 1.8V
3.75ns*1
5.0ns*1
0.5ns*1
0.6ns*1
None.
7.8µs
× 16
None.
0
4,8
4
3, 4, 5
0
SO-DIMM
Normal
VDD ± 0.1V
3.75ns*1
5.0ns*1
0.5ns*1
0.6ns*1
5.0ns*1
Undefined*1
0.6ns*1
Undefined*1
Preliminary Data Sheet E0464E11 (Ver. 1.1)
5
5 Page 
EBE26UC6AASA
www.DataSheet4U.com
Parameter
Symbol Grade max.
Unit Test condition
Auto-refresh current
(Another rank is in IDD2P)
IDD5
Auto-refresh current
(Another rank is in IDD3N)
IDD5
-5C 1040
-4A, -4C 952
-5C 1260
-4A, -4C 1160
tCK = tCK (IDD);
mA Refresh command at every tRFC (IDD) interval;
CKE is H, /CS is H between valid commands;
mA
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Self-refresh current
IDD6
Self Refresh Mode;
CK and /CK at 0V;
48 mA CKE ≤ 0.2V;
Other control and address bus inputs are FLOATING;
Data bus inputs are FLOATING
Operating current
(Bank interleaving)
IDD7
(Another rank is in IDD2P)
Operating current
(Bank interleaving)
IDD7
(Another rank is in IDD3N)
-5C 1840
-4A, -4C 1632
-5C 2060
-4A, -4C 1840
all bank interleaving reads, IOUT = 0mA;
mA BL = 4, CL = CL(IDD), AL = tRCD (IDD) −1 × tCK (IDD);
tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD(IDD),
tRCD = 1 × tCK (IDD);
CKE is H, CS is H between valid commands;
mA Address bus inputs are STABLE during DESELECTs;
Data pattern is same as IDD4W;
Notes: 1. IDD specifications are tested after the device is properly initialized.
2. Input slew rate is specified by AC Input Test Condition.
3. IDD parameters are specified with ODT disabled.
4. Data bus consists of DQ, DM, DQS, /DQS, RDQS, /RDQS, LDQS, /LDQS, UDQS, and /UDQS. IDD
values must be met with all combinations of EMRS bits 10 and 11.
5. Definitions for IDD
L is defined as VIN ≤VIL (AC) (max.)
H is defined as VIN ≥VIH (AC) (min.)
STABLE is defined as inputs stable at an H or L level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as:
inputs changing between H and L every other clock cycle (once per two clocks) for address and control
signals, and inputs changing between H and L every other data transfer (once per clock) for DQ signals
not including masks or strobes.
6. Refer to AC Timing for IDD Test Conditions.
AC Timing for IDD Test Conditions
For purposes of IDD testing, the following parameters are to be utilized.
DDR2-533
DDR2-400
Parameter
4-4-4
3-3-3
4-4-4
CL(IDD)
4
3
4
tRCD(IDD)
15
15
20
tRC(IDD)
60
60
65
tRRD(IDD)
7.5
7.5
7.5
tCK(IDD)
3.75
5
5
tRAS(min.)(IDD)
45
45
45
tRAS(max.)(IDD)
70000
70000
70000
tRP(IDD)
15
15
20
tRFC(IDD)
75
75
75
Unit
tCK
ns
ns
ns
ns
ns
ns
ns
ns
Preliminary Data Sheet E0464E11 (Ver. 1.1)
11
11 Page | ||
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