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RC48F4400P0VT00 Schematic ( PDF Datasheet ) - Intel Corporation

Teilenummer RC48F4400P0VT00
Beschreibung Intel StrataFlash Embedded Memory
Hersteller Intel Corporation
Logo Intel Corporation Logo 




Gesamt 30 Seiten
RC48F4400P0VT00 Datasheet, Funktion
Intel StrataFlash® Embedded Memory
(P30)
1-Gbit P30 Family
Datasheet
Product Features
High performance
Security
— 85/88 ns initial access
— One-Time Programmable Registers:
— 40 MHz with zero wait states, 20 ns clock-to-
data output synchronous-burst read mode
• 64 unique factory device identifier bits
• 64 user-programmable OTP bits
— 25 ns asynchronous-page read mode
• Additional 2048 user-programmable OTP bits
— 4-, 8-, 16-, and continuous-word burst mode
— Selectable OTP Space in Main Array:
— Buffered Enhanced Factory Programming
(BEFP) at 5 µs/byte (Typ)
• 4x32KB parameter blocks + 3x128KB main
blocks (top or bottom configuration)
— 1.8 V buffered programming at 7 µs/byte (Typ)
— Absolute write protection: VPP = VSS
Architecture
— Multi-Level Cell Technology: Highest Density
at Lowest Cost
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
— Asymmetrically-blocked architecture
Software
— Four 32-KByte parameter blocks: top or
— 20 µs (Typ) program suspend
bottom configuration
— 20 µs (Typ) erase suspend
— 128-KByte main blocks
— Intel® Flash Data Integrator optimized
Voltage and Power
— VCC (core) voltage: 1.7 V – 2.0 V
— VCCQ (I/O) voltage: 1.7 V – 3.6 V
— Standby current: 55 µA (Typ) for 256-Mbit
— Basic Command Set and Extended Command
Set compatible
— Common Flash Interface capable
Density and Packaging
— 4-Word synchronous read current:
13 mA (Typ) at 40 MHz
— 64/128/256-Mbit densities in 56-Lead TSOP
package
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
— 64/128/256/512-Mbit densities in 64-Ball
Intel® Easy BGA package
• 1-Gbit in SCSP is –30 °C to +85 °C
— 64/128/256/512-Mbit and 1-Gbit densities in
— Minimum 100,000 erase cycles per block
Intel® QUAD+ SCSP
— ETOX™ VIII process technology (130 nm)
— 16-bit wide data bus
The Intel StrataFlash® Embedded Memory (P30) product is the latest generation of Intel
StrataFlash® memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device
brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.
Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR
device, and support for code and data storage. Features include high-performance synchronous-
burst read mode, fast asynchronous access times, low power, flexible security options, and three
industry standard package choices.
The P30 product family is manufactured using Intel® 130 nm ETOX™ VIII process technology.
Order Number: 306666, Revision: 001
April 2005






RC48F4400P0VT00 Datasheet, Funktion
1-Gbit P30 Family
Revision History
Revision Date
April 2005
Revision
-001
Initial Release
Description
April 2005
6
Intel StrataFlash® Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet

6 Page









RC48F4400P0VT00 pdf, datenblatt
1-Gbit P30 Family
3.2 64-Ball Easy BGA Package
Figure 2. Easy BGA Mechanical Specifications
Ball A1
Corner
D
Ball A1
Corner
S1
12 3 4 5 6 7 8
A
B
C
D
E
E
F
G
H
Top View - Ball side down
8 7 6 5 4 3 21
A
B
C
D
E
F
G
H
Bottom View - Ball Side Up
S2
b
e
A1
A2
A Seating
Plane
Y
Note: Drawing not to scale
Table 2.
Easy BGA Package Dimensions
Product Information
Package Height (64/128/256-Mbit)
Package Height (512-Mbit)
Ball Height (64/128/256-Mbit)
Ball Height (512-Mbit)
Package Body Thickness (64/128/256-Mbit)
Package Body Thickness (512-Mbit)
Ball (Lead) Width
Package Body Width
Package Body Length
Pitch
Ball (Lead) Count
Seating Plane Coplanarity
Corner to Ball A1 Distance Along D
Corner to Ball A1 Distance Along E
Symbol
A
A
A1
A1
A2
A2
b
D
E
[e]
N
Y
S1
S2
Millimeters
Min
-
-
0.250
0.240
-
-
0.330
9.900
12.900
-
-
-
1.400
2.900
Nom
-
-
-
-
0.780
0.910
0.430
10.000
13.000
1.000
64
-
1.500
3.000
Max
1.200
1.300
-
-
-
-
0.530
10.100
13.100
-
-
0.100
1.600
3.100
Min
-
-
0.0098
0.0094
-
-
0.0130
0.3898
0.5079
-
-
-
0.0551
0.1142
Inches
Nom
-
-
-
-
0.0307
0.0358
0.0169
0.3937
0.5118
0.0394
64
-
0.0591
0.1181
Max
0.0472
0.0512
-
-
-
-
0.0209
0.3976
0.5157
-
-
0.0039
0.0630
0.1220
Notes
1
1
1
1
Note: Daisy Chain Evaluation Unit information is at Intel® Flash Memory Packaging Technology http://developer.intel.com/
design/flash/packtech.
April 2005
12
Intel StrataFlash® Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet

12 Page





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