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ACE2341 Schematic ( PDF Datasheet ) - ACE Technology

Teilenummer ACE2341
Beschreibung P-Channel Enhancement Mode MOSFET
Hersteller ACE Technology
Logo ACE Technology Logo 




Gesamt 8 Seiten
ACE2341 Datasheet, Funktion
ACE2341www.DataSheet4U.com
Technology P-Channel Enhancement Mode MOSFET
Description
The ACE2341 is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
-20V/-3.3A, RDS(ON)=45mΩ@VGS=-4.5V
-20V/-2.8A, RDS(ON)= 55mΩ@VGS=-2.5V
-20V/-2.3A, RDS(ON)= 65m@VGS=-1.8V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
SOT-23-3L package design
Application
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
(TA=25Unless otherwise noted)
Parameter
Symbol Typical Unit
Drain-Source Voltage
VDSS -20 V
Gate-Source Voltage
VGSS ±12 V
Continuous Drain Current (TJ=150)
TA=25
TA=70
ID
-4.0 A
-2.8
Pulsed Drain Current
IDM -12 A
Continuous Source Current (Diode Conduction) IS
-1.0 A
Power Dissipation
TA=25
TA=70
PD
1.25 W
0.8
Operating Junction Temperature
TJ -55/150
Storage Temperature Range
TSTG -55/150
Thermal Resistance-Junction to Ambient
RθJA 140 /W
VER 1.2 1






ACE2341 Datasheet, Funktion
ACE2341www.DataSheet4U.com
Technology P-Channel Enhancement Mode MOSFET
Typical Characteristics
Threshold Voltage
Single Pulse Power
TJ – Temperature
Normalized Thermal Transient Impedance, Junction-to-Ambient
Time(sec)
Square Wave Pulse Duration(sec)
VER 1.2 6

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