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Teilenummer | ACE2305 |
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Beschreibung | P-Channel Enhancement Mode MOSFET | |
Hersteller | ACE Technology | |
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Gesamt 8 Seiten ACE2305www.DataSheet4U.com
Technology P-Channel Enhancement Mode MOSFET
Description
The ACE2305 is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
• -15V/-3.5A, RDS(ON)=70mΩ@VGS=-4.5V
• -15V/-3.0A, RDS(ON)=85mΩ@VGS=-2.5V
• -15V/-2.0A, RDS(ON)=105mΩ@VGS=-1.8V
• Super high density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current capability
• SOT-23-3L package design
Application
• Power Management in Note book
• Portable Equipment
• Battery Powered System
• DC/DC Converter
• Load Switch
• DSC
• LCD Display inverter
Absolute Maximum Ratings
(TA=25℃ Unless otherwise noted)
Parameter
Symbol Typical Unit
Drain-Source Voltage
VDSS -15 V
Gate-Source Voltage
VGSS ±12 V
Continuous Drain Current (TJ=150℃)
TA=25℃
TA=70℃
ID
-3.5 A
-2.8
Pulsed Drain Current
IDM -10 A
Continuous Source Current (Diode Conduction) IS
-1.6 A
Power Dissipation
TA=25℃
TA=70℃
PD
1.25 W
0.8
Operating Junction Temperature
TJ 150 ℃
Storage Temperature Range
TSTG -55/150 ℃
Thermal Resistance-Junction to Ambient
RθJA 120 ℃/W
VER 1.2 1
ACE2305www.DataSheet4U.com
Technology P-Channel Enhancement Mode MOSFET
Typical Characteristics
Threshold Voltage
Single Pulse Power
TJ – Temperature
Time(sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration(sec)
VER 1.2 6
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ ACE2305 Schematic.PDF ] |
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