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Teilenummer | ACE7401 |
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Beschreibung | P-Channel Enhancement Mode MOSFET | |
Hersteller | ACE Technology | |
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Gesamt 7 Seiten www.DataSheet4U.com
ACE7401
Technology P-Channel Enhancement Mode MOSFET
Description
The ACE7401 is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other batter powered circuits, and low in-line power loss are needed in
a very small outline surface mount package.
Features
• -30V/-2.8A, RDS(ON)=115mΩ@VGS=-10V
• -30V/-2.5A, RDS(ON)=125mΩ@VGS=-4.5V
• -30V/-1.5A, RDS(ON)=170mΩ@VGS=-2.5V
• -30V/-1.0A, RDS(ON)=240mΩ@VGS=-1.8V
• Super high density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current capability
Application
• Power Management in Note book
• Portable Equipment
• Battery Powered System
• DC/DC Converter
• Load Switch
• DSC
• LCD Display inverter
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS -30 V
Gate-Source Voltage
VGSS ±12 V
Continuous Drain Current (TJ=150℃)
TA=25℃
TA=70℃
ID
-2.8
-2.1
A
Pulsed Drain Current
IDM -8 A
Continuous Source Current (Diode Conduction) IS
-1.4 A
Power Dissipation
TA=25℃
TA=70℃
PD
0.33
0.21
W
Operating Junction Temperature
TJ -55/150 OC
Storage Temperature Range
TSTG -55/150 OC
Thermal Resistance-Junction to Ambient
RθJA
105 OC/W
VER 1.2 1
www.DataSheet4U.com
ACE7401
Technology P-Channel Enhancement Mode MOSFET
Packing Information
SOT-323
VER 1.2 6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ ACE7401 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
ACE7400 | N-Channel Enhancement Mode MOSFET | ACE Technology |
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ACE7401B | P-Channel Enhancement Mode Field Effect Transistor | ACE Technology |
ACE7402A | N-Channel Enhancement Mode MOSFET | ACE Technology |
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