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PDF FDFME3N311ZT Data sheet ( Hoja de datos )
| Número de pieza | FDFME3N311ZT | |
| Descripción | Integrated N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDFME3N311ZT
September 2009
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
30 V, 1.6 A, 299 mΩ
Features
General Description
Max rDS(on) = 299 mΩ at VGS = 4.5 V, ID = 1.6 A
Max rDS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A
Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level > 1600V (Note3)
RoHS Compliant
This device is designed specifically as a single package solution
for a boost topology in cellular handset and other ultra-portable
applications. It features a MOSFET with low input capacitance,
total gate charge and on-state resistance. An independently
connected schottky diode with low forward voltage and reverse
leakage current to maximize boost efficiency.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.
Applications
Boost Functions
Pin1
D
NC
A
K
D
S
G
K
BOTTOM
TOP
MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
VRRM
IO
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25°C
Power Dissipation
Power Dissipation
Schottky Repetitive Peak Reverse Voltage
TC = 25°C
TA = 25°C
Schottky Average Forward Current
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 4)
Ratings
30
±12
1.6
4.5
1.1
0.5
28
1
-55 to +150
Units
V
V
A
W
V
A
°C
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
1T
Device
FDFME3N311ZT
Package
MicroFET 1.6x1.6 Thin
©2009 Fairchild Semiconductor Corporation
FDFME3N311ZT Rev.C2
1
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
110
234
95
210
Reel Size
7’’
Tape Width
8mm
°C/W
Quantity
5000 units
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
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4.5
ID = 1.6 A
3.0
1.5
VDD = 10 V
VDD = 15 V
VDD = 20 V
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
100
Ciss
Coss
10 Crss
f = 1 MHz
VGS = 0 V
4
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. CapacitancevsDrain
to Source Voltage
30
10
1 100 us
1 ms
0.1 THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
0.01 TJ = MAX RATED
RθJA = 234 oC/W
TA = 25 oC
0.001
0.1 1
10 ms
100 ms
1s
10 s
DC
10 100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
10-2
TJ = 125 oC
10-3
TJ = 100 oC
10-4
10-5
10-6
0
TJ = 25 oC
5 10 15 20 25
VR, REVERSE VOLTAGE (V)
30
10-2
10-3 VDS = 0 V
10-4
TJ = 150 oC
10-5
10-6
10-7
10-8 TJ = 25 oC
10-9
0
5 10 15
VGS, GATE TO SOURCE VOLTAGE (V)
20
Figure 10. Gate Leakage Current vs
Gate to Source Voltage
5
1
TJ = 125 oC
0.1
0.01
TJ = 25 oC
0.001
0.0
0.2 0.4 0.6
VF, FORWARD VOLTAGE (mV)
0.8
Figure 11. Schottky Diode Reverse Current
Figure 12. Schottky Diode Forward Voltage
©2009 Fairchild Semiconductor Corporation
FDFME3N311ZT Rev.C2
5
www.fairchildsemi.com
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