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Número de pieza | PMBT3906VS | |
Descripción | 200 MA PNP/PNP Switching Transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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40 V, 200 mA PNP/PNP switching transistor
Rev. 01 — 20 August 2009
Product data sheet
1. Product profile
1.1 General description
PNP/PNP double switching transistor in a SOT666 ultra small and flat lead
Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number Package
NXP
PMBT3906VS SOT666
JEITA
-
NPN/NPN
complement
PMBT3904VS
NPN/PNP
complement
PMBT3946VPN
1.2 Features
I Double general-purpose switching transistor
I Board-space reduction
I AEC-Q101 qualified
I Ultra small and flat lead SMD plastic package
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Conditions
Per transistor
VCEO
IC
hFE
collector-emitter voltage
collector current
DC current gain
open base
VCE = −1 V;
IC = −10 mA
Min Typ Max Unit
- - −40 V
- - −200 mA
100 180 300
1 page NXP Semiconductors
PMBT3906VSwww.DataSheet4U.com
40 V, 200 mA PNP/PNP switching transistor
Table 8. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Cc collector capacitance VCB = −5 V; IE = ie = 0 A;
f = 1 MHz
Ce emitter capacitance VEB = −500 mV;
IC = ic = 0 A; f = 1 MHz
fT transition frequency VCE = −20 V;
IC = −10 mA;
f = 100 MHz
NF noise figure
VCE = −5 V;
IC = −100 µA; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
Min Typ Max Unit
- - 4.5 pF
- - 10 pF
250 - - MHz
- - 4 dB
400
hFE
300
(1)
006aab120
200 (2)
(3)
100
0
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3.
Per transistor:
DC current gain as a function of collector
current; typical values
−0.3
IC
(A)
−0.2
IB (mA) = −5.0
−4.5
−4.0
−3.5
−3.0
−0.1
006aab121
−2.5
−2.0
−1.5
−1.0
−0.5
0
0 −2 −4 −6 −8 −10
VCE (V)
Tamb = 25 °C
Fig 4.
Per transistor:
Collector current as a function of
collector-emitter voltage; typical values
PMBT3906VS_1
Product data sheet
Rev. 01 — 20 August 2009
© NXP B.V. 2009. All rights reserved.
5 of 11
5 Page NXP Semiconductors
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 8
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
13.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
14 Contact information. . . . . . . . . . . . . . . . . . . . . 10
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
PMBT3906VSwww.DataSheet4U.com
40 V, 200 mA PNP/PNP switching transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 August 2009
Document identifier: PMBT3906VS_1
11 Page |
Páginas | Total 11 Páginas | |
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Número de pieza | Descripción | Fabricantes |
PMBT3906VS | 200 MA PNP/PNP Switching Transistor | NXP Semiconductors |
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