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Teilenummer | RJH60F7ADPK |
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Beschreibung | Silicon N Channel IGBT | |
Hersteller | Renesas Technology | |
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Gesamt 7 Seiten RJH60F7ADPK
Silicon N Channel IGBT
High Speed Power Switching
Features
• High speed switching
• Low on-state voltage
• Fast recovery diode
Outline
Preliminary
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REJ03G1837-0100
Rev.1.00
Oct 13, 2009
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
12 3
1. Gate
2. Collector
G 3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW ≤ 5 μs, duty cycle ≤ 1%
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
θj-c
θj-c
Tj
Tstg
Ratings
600
±30
90
50
180
100
328.9
0.38
2.0
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
REJ03G1837-0100 Rev.1.00 Oct 13, 2009
Page 1 of 6
RJH60F7ADPK
Package Dimensions
Package Name
TO-3P
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
15.6 ± 0.3
φ3.2 ± 0.2
Previous Code
TO-3P / TO-3PV
MASS[Typ.]
5.0g
4.8 ± 0.2
1.5
Preliminary
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Unit: mm
1.6
1.4 Max
2.0
2.8
1.0 ± 0.2
3.6 0.9
1.0
0.6 ± 0.2
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Part No.
RJH60F7ADPK-00-T0
Quantity
360 pcs
Box (Tube)
Shipping Container
REJ03G1837-0100 Rev.1.00 Oct 13, 2009
Page 6 of 6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ RJH60F7ADPK Schematic.PDF ] |
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