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RJH60F7ADPK Schematic ( PDF Datasheet ) - Renesas Technology

Teilenummer RJH60F7ADPK
Beschreibung Silicon N Channel IGBT
Hersteller Renesas Technology
Logo Renesas Technology Logo 




Gesamt 7 Seiten
RJH60F7ADPK Datasheet, Funktion
RJH60F7ADPK
Silicon N Channel IGBT
High Speed Power Switching
Features
High speed switching
Low on-state voltage
Fast recovery diode
Outline
Preliminary
www.DataSheet4U.com
REJ03G1837-0100
Rev.1.00
Oct 13, 2009
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
12 3
1. Gate
2. Collector
G 3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 μs, duty cycle 1%
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
θj-c
θj-c
Tj
Tstg
Ratings
600
±30
90
50
180
100
328.9
0.38
2.0
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
REJ03G1837-0100 Rev.1.00 Oct 13, 2009
Page 1 of 6






RJH60F7ADPK Datasheet, Funktion
RJH60F7ADPK
Package Dimensions
Package Name
TO-3P
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
15.6 ± 0.3
φ3.2 ± 0.2
Previous Code
TO-3P / TO-3PV
MASS[Typ.]
5.0g
4.8 ± 0.2
1.5
Preliminary
www.DataSheet4U.com
Unit: mm
1.6
1.4 Max
2.0
2.8
1.0 ± 0.2
3.6 0.9
1.0
0.6 ± 0.2
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Part No.
RJH60F7ADPK-00-T0
Quantity
360 pcs
Box (Tube)
Shipping Container
REJ03G1837-0100 Rev.1.00 Oct 13, 2009
Page 6 of 6

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