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Número de pieza | RJH60F5DPK | |
Descripción | Silicon N Channel IGBT | |
Fabricantes | Renesas Technology | |
Logotipo | ||
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No Preview Available ! RJH60F5DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
• High speed switching
• Low on-state voltage
• Fast recovery diode
Outline
Preliminary
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REJ03G1836-0100
Rev.1.00
Oct 13, 2009
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
12 3
1. Gate
2. Collector
G 3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW ≤ 5 μs, duty cycle ≤ 1%
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
θj-c
θj-c
Tj
Tstg
Ratings
600
±30
80
40
160
100
260.4
0.48
2.0
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
REJ03G1836-0100 Rev.1.00 Oct 13, 2009
Page 1 of 6
1 page RJH60F5DPK
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
Tc = 25°C
Preliminary
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1 D=1
0.5
0.2
0.1
0.05
0.1
0.02 0.01 1 shot pulse
0.01
10 μ
100 μ
1m
θj – c(t) = γs (t) • θj – c
θj – c = 0.48 °C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
10 m
100 m
1
10
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
Tc = 25°C
D=1
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
1 shot pulse
0.01
10 μ
100 μ
θj – c(t) = γs (t) • θj – c
θj – c = 2°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Ic Monitor
Vin Monitor
RL
Rg
Vin = 15 V
D.U.T.
VCC
Waveform
90%
Vin 10%
90%
90%
Ic
td(on)
10%
tr
ton
td(off)
toff
10%
tf
REJ03G1836-0100 Rev.1.00 Oct 13, 2009
Page 5 of 6
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RJH60F5DPK.PDF ] |
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