Datenblatt-pdf.com


RJH60D7DPK Schematic ( PDF Datasheet ) - Renesas Technology

Teilenummer RJH60D7DPK
Beschreibung IGBT
Hersteller Renesas Technology
Logo Renesas Technology Logo 




Gesamt 10 Seiten
RJH60D7DPK Datasheet, Funktion
Preliminary Datasheet
RJH60D7DPK
600V - 50A - IGBT
Application: Inverter
R07DS0165EJ0400
Rev.4.00
Apr 19, 2012
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
12 3
1. Gate
G
2. Collector
3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
90
50
200
30
120
300
0.42
2.1
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0165EJ0400 Rev.4.00
Apr 19, 2012
Page 1 of 9






RJH60D7DPK Datasheet, Funktion
RJH60D7DPK
10000
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
1000
100
Coes
VGE = 0 V
f = 1 MHz
Cres
10 Tc = 25°C
0 50 100 150 200 250 300
Collector to Emitter Voltage VCE (V)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
300
VCC = 300 V
250 IF = 30 A
200 Tc = 150°C
150
100
25°C
50
0
0 40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
16
VCC = 300 V
IF = 30 A
12
Tc = 150°C
8
4
25°C
0
0 40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Preliminary
Dynamic Input Characteristics (Typical)
800
VCE = 300 V
IC = 50 A
Tc = 25°C
600
VGE
16
12
400 8
200 4
VCE
0
0 40
0
80 120 160 200
Gate Charge Qg (nc)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
2.0
VCC = 300 V
IF = 30 A
1.6
1.2
0.8
Tc = 150°C
0.4
25°C
0
0 40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Forward Current vs. Forward Voltage (Typical)
120
100
Tc = 25°C
150°C
80
60
40
20 VCE = 0 V
Pulse Test
0
01234
C-E Diode Forward Voltage VCEF (V)
R07DS0165EJ0400 Rev.4.00
Apr 19, 2012
Page 6 of 9

6 Page







SeitenGesamt 10 Seiten
PDF Download[ RJH60D7DPK Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
RJH60D7DPKIGBTRenesas Technology
Renesas Technology
RJH60D7DPMIGBTRenesas
Renesas
RJH60D7DPQ-E0IGBTRenesas
Renesas

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche