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PBHV9215Z Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PBHV9215Z
Beschreibung 2A PNP High-voltage Low VCEsat (BISS) Transistor
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 12 Seiten
PBHV9215Z Datasheet, Funktion
PBHV9215Z
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
Rev. 01 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8215Z.
1.2 Features
„ High voltage
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
„ AEC-Q101 qualified
„ Medium power SMD plastic package
1.3 Applications
„ LED driver for LED chain module
„ LCD backlighting
„ Automotive motor management
„ Switch Mode Power Supply (SMPS)
1.4 Quick reference data
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Table 1. Quick reference data
Symbol Parameter
VCEO
collector-emitter voltage
IC collector current
hFE DC current gain
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Conditions
open base
VCE = 10 V;
IC = 100 mA
Min Typ Max Unit
- - 150 V
- - 2 A
[1] 100 180 -






PBHV9215Z Datasheet, Funktion
NXP Semiconductors
PBHV9215Z
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
300
hFE
200
100
006aab855
(1)
(2)
(3)
0
101
1
10
102
103
104
IC (mA)
VCE = 10 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 4. DC current gain as a function of collector
current; typical values
1.2
VBE
(V)
0.8
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0.4
(1)
(2)
(3)
006aab857
4.0
IC
(A)
3.2
2.4
1.6
IB (mA) = 360
288
216
006aab856
324
252
180
144 108
72
36
0.8
0
0 1 2 3 4 5
VCE (V)
Tamb = 25 °C
Fig 5. Collector current as a function of
collector-emitter voltage; typical values
1.3
VBEsat
(V)
0.9
0.5
(1)
(2)
(3)
006aab858
0
101
1
10
102
103
104
IC (mA)
0.1
101
1
10
102
103
104
IC (mA)
VCE = 10 V
(1) Tamb = 55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 6. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 5
(1) Tamb = 55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter saturation voltage as a function
of collector current; typical values
PBHV9215Z_1
Product data sheet
Rev. 01 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
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PBHV9215Z pdf, datenblatt
NXP Semiconductors
PBHV9215Z
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information . . . . . . . . . . . . . . . . . . . . . 8
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
13.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 December 2009
Document identifier: PBHV9215Z_1

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