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Teilenummer | G4PC40K |
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Beschreibung | IRG4PC40K | |
Hersteller | International Rectifier | |
Logo | ||
Gesamt 8 Seiten PD - 9.1585B
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides higher efficiency
than Generation 3
• Industry standard TO-247AC package
IRG4PC40K
Short Circuit Rated
UltraFast IGBT
C
VCES = 600V
G
E
n-channel
VCE(on) typ. = 2.1V
@VGE = 15V, IC = 25A
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
www.DataSheet4UIC.c@omTC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
TO-247AC
Max.
600
42
25
84
84
10
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.77
–––
40
–––
Units
°C/W
g (oz)
4/15/2000
IRG4PC40K
5.0 RG = 10OΩhm
T J = 150° C
VCC = 480V
4.0 VGE = 15V
3.0
2.0
1.0
0.0
0
10 20 30 40
I C , Collector-to-emitter Current (A)
50
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
VGE = 20V
T J = 125 oC
100
10
SAFE OPERATING AREA
1
1 10 100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
www.DataSheet4U.com
6 www.irf.com
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ G4PC40K Schematic.PDF ] |
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