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Teilenummer | D2030 |
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Beschreibung | NPN Transistor - 2SD2030 | |
Hersteller | Renesas Technology | |
Logo | ||
Gesamt 8 Seiten To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
www.DataSheet4U.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
2SD2030, 2SD2031
Saturation Voltage vs. Collector Current
5
lC = 10 lB
Pulse Test
2
1.0 VBE (sat) Ta = –25°C
0.5
0.2 VCE (sat)
0.1
75
25
75
25
Ta =
–25°C
0.05
1
2 5 10 20 50 100
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
500
VCE = 5 V
200 Pulse Test
100
50
20
10
5
0.5 1.0 2
5 10 20
Collector Current IC (mA)
50
www.DataSheet4U.com
Collector Output Capacitance vs.
Collector to Base Voltage
50
20 f = 1 MHz
IE = 0
10
5
2
1.0
0.5
1
2
5 10 20 50 100
Collector to Base Voltage VCB (V)
6 Page | ||
Seiten | Gesamt 8 Seiten | |
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