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PDF ADL5356 Data sheet ( Hoja de datos )
| Número de pieza | ADL5356 | |
| Descripción | Dual-Balanced Mixer / IF Amplifier | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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1200 MHz to 2500 MHz, Dual-Balanced
Mixer, LO Buffer, IF Amplifier, and RF Balun
ADL5356
FEATURES
RF frequency range of 1200 MHz to 2500 MHz
IF frequency range of 30 MHz to 450 MHz
Power conversion gain: 8.2 dB
SSB noise figure of 9.9 dB
SSB noise figure with 5 dBm blocker of 21 dB
Input IP3 of 31 dBm
Input P1dB of 11 dBm
Typical LO drive of 0 dBm
Single-ended, 50 Ω RF and LO input ports
High isolation SPDT LO input switch
Single-supply operation: 3.3 V to 5 V
Exposed paddle, 6 mm × 6 mm, 36-lead LFCSP
APPLICATIONS
Cellular base station receivers
Transmit observation receivers
Radio link downconverters
GENERAL DESCRIPTION
The ADL5356 uses a highly linear, doubly balanced, passive mixer
core along with integrated RF and local oscillator (LO) balancing
circuitry to allow single-ended operation. The ADL5356
incorporates the RF baluns, allowing for optimal performance over
a 1200 MHz to 2500 MHz RF input frequency range. Performance
is optimized for RF frequencies from 1700 MHz to 2500 MHz
using a low-side LO and RF frequencies from 1200 MHz to
www.Da17ta0S0hMeeHt4zUu.scionmg a high-side LO. The balanced passive mixer
arrangement provides good LO-to-RF leakage, typically better
than −35 dBm, and excellent intermodulation performance. The
balanced mixer core also provides extremely high input linearity,
allowing the device to be used in demanding cellular applications
where in-band blocking signals may otherwise result in the
degradation of dynamic performance. A high linearity IF buffer
amplifier follows the passive mixer core to yield a typical power
conversion gain of 8.2 dB and can be used with a wide range of
output impedances.
The ADL5356 provides two switched LO paths that can be used
in TDD applications where it is desirable to ping-pong between
two local oscillators. LO current can be externally set using a
resistor to minimize dc current commensurate with the desired
level of performance. For low voltage applications, the ADL5356 is
capable of operation at voltages down to 3.3 V with substantially
reduced current. Under low voltage operation, an additional logic
pin is provided to power down (<300 μA) the circuit when desired.
FUNCTIONAL BLOCK DIAGRAM
MNIN 1
36 35 34 33 32 31 30 29 28
27 LOI2
MNCT 2
26 VGS2
COMM 3
25 VGS1
VPOS 4
24 VGS0
COMM 5
23 LOSW
VPOS 6
22 PWDN
COMM 7
DVCT 8
ADL5356
21 VPOS
20 COMM
DVIN 9
19 LOI1
10 11 12 13 14 15 16 17 18
Figure 1.
The ADL5356 is fabricated using a BiCMOS high performance
IC process. The device is available in a 6 mm × 6 mm, 36-lead
LFCSP and operates over a −40°C to +85°C temperature range.
An evaluation board is also available.
Table 1. Passive Mixers
RF Frequency
(MHz)
Single
Mixer
500 to 1700
ADL5367
1200 to 2500
ADL5365
Single Mixer
and IF Amp
ADL5357
ADL5355
Dual Mixer
and IF Amp
ADL5358
ADL5356
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2009 Analog Devices, Inc. All rights reserved.
1 page  
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter
Supply Voltage, VS
RF Input Level
LO Input Level
MNOP, MNON, DVOP, DVON Bias
VGS2,VGS1,VGS0, LOSW, PWDN
Internal Power Dissipation
θJA
Maximum Junction Temperature
Operating Temperature Range
Storage Temperature Range
Lead Temperature (Soldering, 60 sec)
Rating
5.5 V
20 dBm
13 dBm
6.0 V
5.5 V
2.2 W
22°C/W
150°C
−40°C to +85°C
−65°C to +150°C
260°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
www.DataSheet4U.com
ADL5356
Rev. 0 | Page 5 of 24
5 Page 
ADL5356
VS = 5 V, IS = 350 mA, TA = 25°C, fRF = 1900 MHz, fLO = 1697 MHz, LO power = 0 dBm, RF power = −10 dBm, R1 = R4 = 1.3 kΩ, R2 = R5 = 1 kΩ,
ZO = 50 Ω, VGS0 = VGS1 = VGS2 = 0 V, unless otherwise noted.
100
MEAN = 8.26
SD = 0.31%
500 10
80 400 8
60 300 6
40 200 4
20 100 2
0
7.6 7.8 8.0 8.2 8.4 8.6
CONVERSION GAIN (dB)
Figure 27. Conversion Gain Distribution
8.8
100
MEAN = 31.67
SD = 0.35%
80
60
40
20
0
20
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25 30 35 40
INPUT IP3 LO (dBm)
Figure 28. Input IP3 Distribution
100
MEAN = 11.37
SD = 0.49%
80
45
00
30 80 130 180 230 280 330 380 430
IF FREQUENCY (MHz)
Figure 30. IF Output Impedance (R Parallel C Equivalent)
0
5
10
15
20
25
30
1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200
RF FREQUENCY (MHz)
Figure 31. RF Port Return Loss, Fixed IF
0
5
60 10
SELECTED
40 15
UNSELECTED
20 20
0
10 11 12
INPUT P1dB (dBm)
Figure 29. Input P1dB Distribution
13
25
1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00
LO FREQUENCY (GHz)
Figure 32. LO Return Loss, Selected and Unselected
Rev. 0 | Page 11 of 24
11 Page | ||
| Páginas | Total 24 Páginas | |
| PDF Descargar | [ Datasheet ADL5356.PDF ] | |
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