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PBSS304NX Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PBSS304NX
Beschreibung NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 15 Seiten
PBSS304NX Datasheet, Funktion
PBSS304NX
60 V, 4.7 A NPN low VCEsat (BISS) transistor
Rev. 02 — 20 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS304PX.
1.2 Features
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
„ High efficiency due to less heat generation
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ High-voltage DC-to-DC conversion
„ High-voltage MOSFET gate driving
„ High-voltage motor control
„ High-voltage power switches (e.g. motors, fans)
„ Automotive applications
1.4 Quick reference data
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Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
collector-emitter voltage open base
- - 60 V
IC collector current
- - 4.7 A
ICM
RCEsat
peak collector current
collector-emitter saturation
resistance
single pulse;
tp 1 ms
IC = 4 A;
IB = 200 mA
-
[1] -
- 9.4 A
37 53 mΩ
[1] Pulse test: tp 300 μs; δ ≤ 0.02.






PBSS304NX Datasheet, Funktion
NXP Semiconductors
PBSS304NX
60 V, 4.7 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
IEBO
collector-base cut-off
current
emitter-base cut-off
current
VCB = 60 V; IE = 0 A
VCB = 60 V; IE = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE
VCEsat
RCEsat
VBEsat
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VBEon
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter saturation
voltage
base-emitter turn-on
voltage
VCE = 2 V; IC = 0.5 A
VCE = 2 V; IC = 1 A
VCE = 2 V; IC = 2 A
VCE = 2 V; IC = 4 A
VCE = 2 V; IC = 6 A
IC = 0.5 A; IB = 50 mA
IC = 1 A; IB = 50 mA
IC = 1 A; IB = 10 mA
IC = 2 A; IB = 40 mA
IC = 4 A; IB = 200 mA
IC = 4 A; IB = 400 mA
IC = 4 A; IB = 80 mA
IC = 4.7 A; IB = 235 mA
IC = 4 A; IB = 200 mA
IC = 4 A; IB = 80 mA
IC = 1 A; IB = 100 mA
IC = 4 A; IB = 400 mA
VCE = 2 V; IC = 2 A
td delay time
tr rise time
ton turn-on time
VCC = 12.5 V; IC = 3 A;
IBon = 0.15 A;
IBoff = 0.15 A
ts storage time
tf fall time
toff turn-off time
fT transition frequency VCE = 10 V; IC = 100 mA;
f = 100 MHz
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Min Typ Max Unit
--
100 nA
--
50 μA
--
100 nA
[1] 300
[1] 300
[1] 250
[1] 150
[1] 75
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
520 -
500 -
470 -
250 -
115 -
25 35
50 70
85 120
105 150
145 210
140 200
190 290
170 245
37 53
48 73
0.82 0.9
0.94 1.05
0.75 0.85
mV
mV
mV
mV
mV
mV
mV
mV
mΩ
mΩ
V
V
V
- 15 -
- 95 -
- 110 -
- 360 -
- 195 -
- 555 -
- 130 -
ns
ns
ns
ns
ns
ns
MHz
- 48 70 pF
PBSS304NX_2
Product data sheet
Rev. 02 — 20 November 2009
© NXP B.V. 2009. All rights reserved.
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PBSS304NX pdf, datenblatt
NXP Semiconductors
12. Mounting
32 mm
PBSS304NX
60 V, 4.7 A NPN low VCEsat (BISS) transistor
32 mm
30 mm
2.5 mm
40
mm 1 mm
2.5 mm
0.5 mm
3.96 mm
3 mm
1 mm
5 mm
1.6 mm
001aaa234
PCB thickness:
FR4 PCB = 1.6 mm
ceramic PCB = 0.635 mm
Fig 18. FR4 PCB, standard footprint;
ceramic PCB, Al2O3, standard
footprint
20
mm
40
mm
2.5 mm
0.5 mm
3.96 mm
1 mm
5 mm
1.6 mm
001aaa235
PCB thickness = 1.6 mm
Fig 19. FR4 PCB, mounting pad for
collector 6 cm2
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PBSS304NX_2
Product data sheet
Rev. 02 — 20 November 2009
© NXP B.V. 2009. All rights reserved.
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