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Teilenummer | RJK6026DPP |
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Beschreibung | Silicon N Channel MOSFET High Speed Power Switching | |
Hersteller | Renesas Technology | |
Logo | ||
Gesamt 7 Seiten RJK6026DPP
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
1
23
G
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
www.DaGtaaStheeteot4sUo.ucorcme voltage
Drain current
Drain peak current
VDSS
VGSS
ID Note4
ID (pulse) Note1
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IDR (pulse) Note1
IAPNote3
EARNote3
Pch Note2
Channel to case thermal impedance
θch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
4. Limited by maximum safe operation area
REJ03G1592-0200
Rev.2.00
Jun 04, 2008
D
1. Gate
2. Drain
3. Source
S
Ratings
600
±30
5
20
5
20
4
0.87
28.5
4.38
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1592-0200 Rev.2.00 Jun 04, 2008
Page 1 of 6
RJK6026DPP
Package Dimensions
Package Name
TO-220FN
JEITA Package Code
RENESAS Code
PRSS0003AB-A
Previous Code
MASS[Typ.]
2.0g
10 ± 0.3
2.8 ± 0.2
2.54 ± 0.25
φ3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15 0.75 ± 0.15
2.54 ± 0.25
Unit: mm
Ordering Information
Part No.
RJK6026DPP-00-T2
Quantity
1050 pcs
www.DataSheet4U.com
Box (Tube)
Shipping Container
REJ03G1592-0200 Rev.2.00 Jun 04, 2008
Page 6 of 6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ RJK6026DPP Schematic.PDF ] |
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