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GB6B60KD Schematic ( PDF Datasheet ) - International Rectifier

Teilenummer GB6B60KD
Beschreibung IRGB6B60KD
Hersteller International Rectifier
Logo International Rectifier Logo 




Gesamt 15 Seiten
GB6B60KD Datasheet, Funktion
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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
C
G
E
n-channel
PD - 94381E
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
VCES = 600V
IC = 7.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
www.DataSheet4UIF.c@omTC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current„
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
TO-220AB
IRGB6B60KD
D2Pak
TO-262
IRGS6B60KD IRGSL6B60KD
Max.
600
13
7.0
26
26
13
7.0
26
± 20
90
36
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
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Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)‚
Weight
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
1.44
Max.
1.4
4.4
–––
62
40
–––
Units
°C/W
g
1
8/18/04






GB6B60KD Datasheet, Funktion
www.DataSheet4U.com
IRG/B/S/SL6B60KD
700
600
500
400
300
200
100
0
0
EON
EOFF
5 10 15
IC (A)
20
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=1.4mH; VCE= 400V
RG= 100; VGE= 15V
1000
tdOFF
100
tF
tdON
10 tR
1
0
5 10 15 20
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.4mH; VCE= 400V
RG= 100; VGE= 15V
250
200
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150
100
50
EOFF
EON
1000
100
10
tdOFF
tdON
tR
tF
0
0
50 100 150
RG ()
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V
6
200
1
0
50 100 150 200
RG ()
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V
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6 Page









GB6B60KD pdf, datenblatt
www.DataSheet4U.com
IRG/B/S/SL6B60KD
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.54 (.415)
10.29 (.405)
4
3.78 (.149)
3.54 (.139)
-A-
6.47 (.255)
6.10 (.240)
1 23
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
4.69 (.185)
4.20 (.165)
-B-
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS
HEXFE1T- GATE IGBTs, CoPACK
1- GAT2E- DRAIN 1- GATE
2- DRA3IN- SOURCE 2- COLLECTOR
3- SOU4R-CDERAIN 3- EMITTER
4- DRAIN
4- COLLECTOR
3X
1.40 (.055)
1.15 (.045)
2.54 (.100)
3X
0.93 (.037)
0.69 (.027)
0.36 (.014) M B A M
3X
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
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TO-220AB Part Marking Information
E XAMP L E : T HIS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
12
PAR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
LINE C
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