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Teilenummer | PBHV9050T |
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Beschreibung | 150mA PNP high-voltage low VCEsat (BISS) transistor | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 12 Seiten PBHV9050T
500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor
Rev. 01 — 16 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a
SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
NPN complement: PMBTA45.
1.2 Features
I High voltage
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I AEC-Q101 qualified
1.3 Applications
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I Electronic ballasts
I LED driver for LED chain module
I LCD backlighting
I Automotive motor management
I Flyback converters
I Hook switch for wired telecom
I Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Symbol
VCESM
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter peak
voltage
collector-emitter voltage
collector current
DC current gain
Conditions
VBE = 0 V
open base
VCE = −10 V;
IC = −50 mA
Min Typ Max Unit
- - −500 V
- - −500 V
- - −0.15 A
80 160 300
NXP Semiconductors
PBHV9050T
500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor
240
hFE
180
120
60
006aab692
(1)
(2)
(3)
0
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −10 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
−1.00
VBE
(V)
−0.75
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(1)
(2)
(3)
006aab694
−0.25
−0.5
IC
(A)
−0.4
IB (mA) = −200
−180
−160 −140
−120 −100
−0.3
−80
−60
−0.2 −40
−20
−0.1
006aab693
0.0
0
−1 −2 −3 −4 −5
VCE (V)
Tamb = 25 °C
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
−1.2
VBEsat
(V)
−0.9
−0.6
006aab695
(1)
(2)
(3)
−0.3
0.0
−10−1
−1
−10
−102
−103
IC (mA)
0.0
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −10 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 5. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 5
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 6. Base-emitter saturation voltage as a function
of collector current; typical values
PBHV9050T_1
Product data sheet
Rev. 01 — 16 September 2009
© NXP B.V. 2009. All rights reserved.
6 of 12
6 Page NXP Semiconductors
PBHV9050T
500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 8
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
13.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 16 September 2009
Document identifier: PBHV9050T_1
12 Page | ||
Seiten | Gesamt 12 Seiten | |
PDF Download | [ PBHV9050T Schematic.PDF ] |
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