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PBHV9050T Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PBHV9050T
Beschreibung 150mA PNP high-voltage low VCEsat (BISS) transistor
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 12 Seiten
PBHV9050T Datasheet, Funktion
PBHV9050T
500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor
Rev. 01 — 16 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a
SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
NPN complement: PMBTA45.
1.2 Features
I High voltage
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I AEC-Q101 qualified
1.3 Applications
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I Electronic ballasts
I LED driver for LED chain module
I LCD backlighting
I Automotive motor management
I Flyback converters
I Hook switch for wired telecom
I Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Symbol
VCESM
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter peak
voltage
collector-emitter voltage
collector current
DC current gain
Conditions
VBE = 0 V
open base
VCE = 10 V;
IC = 50 mA
Min Typ Max Unit
- - 500 V
- - 500 V
- - 0.15 A
80 160 300






PBHV9050T Datasheet, Funktion
NXP Semiconductors
PBHV9050T
500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor
240
hFE
180
120
60
006aab692
(1)
(2)
(3)
0
101
1
10
102
103
IC (mA)
VCE = 10 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 3. DC current gain as a function of collector
current; typical values
1.00
VBE
(V)
0.75
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(1)
(2)
(3)
006aab694
0.25
0.5
IC
(A)
0.4
IB (mA) = 200
180
160 140
120 100
0.3
80
60
0.2 40
20
0.1
006aab693
0.0
0
1 2 3 4 5
VCE (V)
Tamb = 25 °C
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
1.2
VBEsat
(V)
0.9
0.6
006aab695
(1)
(2)
(3)
0.3
0.0
101
1
10
102
103
IC (mA)
0.0
101
1
10
102
103
IC (mA)
VCE = 10 V
(1) Tamb = 55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 5. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 5
(1) Tamb = 55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 6. Base-emitter saturation voltage as a function
of collector current; typical values
PBHV9050T_1
Product data sheet
Rev. 01 — 16 September 2009
© NXP B.V. 2009. All rights reserved.
6 of 12

6 Page









PBHV9050T pdf, datenblatt
NXP Semiconductors
PBHV9050T
500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 8
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
13.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 16 September 2009
Document identifier: PBHV9050T_1

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