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Número de pieza | PMEG4050EP | |
Descripción | Schottky Barrier Rectifier ( Diode ) | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PMEG4050EP (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! PMEG4050EP
5 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 14 September 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Average forward current: IF(AV) ≤ 5 A
I Reverse voltage: VR ≤ 40 V
I Low forward voltage
I High power capability due to clip-bond technology
I AEC-Q101 qualified
I Small and flat lead SMD plastic package
1.3 Applications
I Low voltage rectification
I High efficiency DC-to-DC conversion
I Switch Mode Power Supply (SMPS)
I Reverse polarity protection
I Low power consumption applications
www.DataSheet4U.com 1.4 Quick reference data
Table 1. Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol Parameter
IF(AV)
average forward current
VR reverse voltage
VF forward voltage
IR reverse current
Conditions
square wave;
δ = 0.5;
f = 20 kHz;
Tsp ≤ 130 °C
IF = 5 A
VR = 40 V
Min Typ Max Unit
- - 5A
- - 40 V
- 430 490 mV
- 60 300 µA
1 page NXP Semiconductors
PMEG4050EP
5 A low VF MEGA Schottky barrier rectifier
102
Zth(j-a)
(K/W)
10
duty cycle =
1
0.5
0.25
0.75
0.33
0.2
0.1
0.05
1 0.02 0.01
006aab690
0
10−1
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
www.DataSheet4U.com
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 0.1 A
IF = 1 A
IF = 5 A
IR
reverse current
VR = 10 V
VR = 40 V
Cd diode capacitance f = 1 MHz
VR = 1 V
VR = 10 V
Min Typ Max Unit
- 270 310 mV
- 340 390 mV
- 430 490 mV
- 10 - µA
- 60 300 µA
- 600 - pF
- 220 - pF
PMEG4050EP_1
Product data sheet
Rev. 01 — 14 September 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
5 Page NXP Semiconductors
12. Revision history
Table 9. Revision history
Document ID
Release date
PMEG4050EP_1
20090914
Data sheet status
Product data sheet
PMEG4050EP
5 A low VF MEGA Schottky barrier rectifier
Change notice
-
Supersedes
-
www.DataSheet4U.com
PMEG4050EP_1
Product data sheet
Rev. 01 — 14 September 2009
© NXP B.V. 2009. All rights reserved.
11 of 13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet PMEG4050EP.PDF ] |
Número de pieza | Descripción | Fabricantes |
PMEG4050EP | Schottky Barrier Rectifier ( Diode ) | NXP Semiconductors |
PMEG4050ETP | 40V 5A low VF MEGA Schottky barrier rectifier | NXP Semiconductors |
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