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PDF PMEG3020EP Data sheet ( Hoja de datos )
| Número de pieza | PMEG3020EP | |
| Descripción | Schottky Barrier Rectifier ( Diode ) | |
| Fabricantes | NXP Semiconductors | |
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PMEG3020EP
2 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 15 September 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Average forward current: IF(AV) ≤ 2 A
I Reverse voltage: VR ≤ 30 V
I Low forward voltage
I High power capability due to clip-bond technology
I AEC-Q101 qualified
I Small and flat lead SMD plastic package
1.3 Applications
I Low voltage rectification
I High efficiency DC-to-DC conversion
I Switch Mode Power Supply (SMPS)
I Reverse polarity protection
I Low power consumption applications
w w w . D a t a S h e e 1t 4.4U .Qc uo imck reference data
Table 1. Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
Tamb ≤ 110 °C [1] - - 2
Tsp ≤ 140 °C
--2
VR reverse voltage
- - 30
VF forward voltage
IR reverse current
IF = 2 A
VR = 30 V
- 310 360
- 13
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Unit
A
A
V
mV
mA
1 page  
NXP Semiconductors
PMEG3020EP
2 A low VF MEGA Schottky barrier rectifier
102
Zth(j-a)
(K/W)
10
duty cycle =
1
0.5
0.25
0.75
0.33
0.2
0.1
0.05
0.02 0.01
1
0
006aab730
10−1
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
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Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 0.5 A
IF = 1 A
IF = 2 A
IR
reverse current
VR = 5 V
VR = 30 V
Cd diode capacitance f = 1 MHz
VR = 1 V
VR = 10 V
Min Typ Max Unit
- 250 280 mV
- 275 310 mV
- 310 360 mV
- 130 - µA
- 1 3 mA
- 325 - pF
- 110 - pF
PMEG3020EP_1
Product data sheet
Rev. 01 — 15 September 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
12. Revision history
Table 9. Revision history
Document ID
Release date
PMEG3020EP_1
20090915
Data sheet status
Product data sheet
PMEG3020EP
2 A low VF MEGA Schottky barrier rectifier
Change notice
-
Supersedes
-
www.DataSheet4U.com
PMEG3020EP_1
Product data sheet
Rev. 01 — 15 September 2009
© NXP B.V. 2009. All rights reserved.
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| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet PMEG3020EP.PDF ] | |
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