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PDF EM621FU16BU Data sheet ( Hoja de datos )
| Número de pieza | EM621FU16BU | |
| Descripción | 128K x 16 bit Low Power and Low Voltage Full CMOS Static RAM | |
| Fabricantes | Emerging Memory | |
| Logotipo |  |
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Document Title
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
0.1
History
Initial Draft
0.1 Revision
EM621FU16BU Series
Low Power, 128Kx16 SRAM
Draft Date
Oct. 31, 2007
Nov. 16, 2007
Remark
www.DataSheet4U.com
Emerging Memory & Logic Solutions Inc.
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-719
Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
1 page  
EM621FU16BU Series
Low Power, 128Kx16 SRAM
AC OPERATING CONDITIONS
Test Conditions (Test Load and Test Input/Output Reference)
Input Pulse Level : 0.4V to 2.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : 1.5V
Output Load (See right) : CL1) = 100pF + 1 TTL (70ns)
CL1) = 30pF + 1 TTL (45ns/55ns)
1. Including scope and Jig capacitance
2. R1=3070 ohm, R2=3150 ohm
3. VTM=2.8V
4. CL = 5pF + 1 TTL (measurement with tLZ, tHZ, tOLZ, tOHZ, tWHZ)
CL1)
READ CYCLE (Vcc =2.7V to 3.3V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
Symbol
45ns
Min Max
55ns
Min Max
Read cycle time
tRC 45 - 55 -
Address access time
tAA - 45 - 55
Chip select to output
tCO - 45 - 55
Output enable to valid output
tOE - 25 - 25
UB, LB access time
tBA 45 55
Chip select to low-Z output
tLZ 10 - 10 -
UB, LB enable to low-Z output
tBLZ 5 - 10 -
Output enable to low-Z output
tOLZ
5-5-
Chip disable to high-Z output
tHZ 0 20 0 20
UB, LB disable to high-Z output
tBHZ
0 15 0 20
www.DaOtauSthpeuett4dUis.acbomle to high-Z output
tOHZ
0 15 0 20
Output hold from address change
tOH 10 - 10 -
70ns
Min Max
70 -
- 70
- 70
- 35
70
10 -
10 -
5-
0 25
0 25
0 25
10 -
WRITE CYCLE (Vcc =2.7V to 3.3V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
Symbol
45ns
Min Max
55ns
Min Max
Write cycle time
tWC 45 - 55 -
Chip select to end of write
tCW 45 - 45 -
Address setup time
tAS 0 - 0 -
Address valid to end of write
tAW 45 - 45 -
UB, LB valid to end of write
tBW 45 - 45 -
Write pulse width
tWP 35 - 40 -
Write recovery time
tWR 0 - 0 -
Write to ouput high-Z
tWHZ
0 15 0 20
Data to write time overlap
tDW 25
25
Data hold from write time
tDH 0 - 0 -
End write to output low-Z
tOW 5 - 5 -
70ns
Min Max
70 -
60 -
0-
60 -
60 -
50 -
0-
0 20
30
0-
5-
VTM3)
R12)
R22)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
5 Page 
EM621FU16BU Series
Low Power, 128Kx16 SRAM
SRAM PART CODING SYSTEM
EM X XX X X X XX X X - XX XX
1. EMLSI Memory
2. Product Type
3. Density
4. Function
5. Technology
6. Operating Voltage
1. Memory Component
EM --------------------- Memory
2. Product Type
6 ------------------------ SRAM
3. Density
1 ------------------------- 1M
2 ------------------------- 2M
4 ------------------------- 4M
8 ------------------------- 8M
www.DataShee4t4. UF.cuonmction
0 ----------------------- Dual CS
1 ----------------------- Single CS
2 ----------------------- Multiplexed
3 ------------- Single CS / LBB, UBB(tBA=tOE)
4 ------------- Single CS / LBB, UBB(tBA=tCO)
5 ------------- Dual CS / LBB, UBB(tBA=tOE)
6 ------------- Dual CS / LBB, UBB(tBA=tCO)
5. Technology
F ------------------------- Full CMOS
6. Operating Voltage
T ------------------------- 5.0V
V ------------------------- 3.3V
U ------------------------- 3.0V
S ------------------------- 2.5V
R ------------------------- 2.0V
P ------------------------- 1.8V
11. Power
10. Speed
9. Package
8. Generation
7. Organization
7. Organization
8 ---------------------- x8 bit
16 ---------------------- x16 bit
8. Generation
Blank ----------------- 1st generation
A ----------------------- 2nd generation
B ----------------------- 3rd generation
C ----------------------- 4th generation
D ----------------------- 5th generation
E ----------------------- 6th generation
F ----------------------- 7th generation
G ---------------------- 8th generation
9. Package
Blank ---------------- KGD, 48&36FpBGA
S ---------------------- 32 sTSOP1
T ---------------------- 32 TSOP1
U ---------------------- 44 TSOP2
V ---------------------- 32 SOP
10. Speed
45 ---------------------- 45ns
55 ---------------------- 55ns
70 ---------------------- 70ns
85 ---------------------- 85ns
10 ---------------------- 100ns
12 ---------------------- 120ns
11. Power
LL ---------------------- Low Low Power
LF ---------------------- Low Low Power(Pb-Free & Green)
L ---------------------- Low Power
S ---------------------- Standard Power
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet EM621FU16BU.PDF ] | |
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