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D2222 Schematic ( PDF Datasheet ) - Panasonic Semiconductor

Teilenummer D2222
Beschreibung NPN Transistor - 2SD2222
Hersteller Panasonic Semiconductor
Logo Panasonic Semiconductor Logo 




Gesamt 3 Seiten
D2222 Datasheet, Funktion
Power Transistors
2SD2222
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1470
s Features
q Optimum for 120W HiFi output
q High foward current transfer ratio hFE
q Low collector to emitter saturation voltage VCE(sat)
20.0±0.5
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
1.5
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
160
160
5
15
8
150
3.5
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
2.0±0.3
3.0±0.3
1.0±0.2
1.5
2.7±0.3
0.6±0.2
5.45±0.3
10.9±0.5
123
1:Base
2:Collector
3:Emitter
TOP–3L Package
Internal Connection
C
B
s Electrical Characteristics (TC=25˚C)
www.DataSheet4PUar.acmometer
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 160V, IE = 0
VCE = 160V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 7A
IC = 7A, IB = 7mA
IC = 7A, IB = 7mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 7A, IB1 = 7mA, IB2 = –7mA,
VCC = 50V
*hFE2 Rank classification
Rank
Q
P
hFE2 3500 to 10000 7000 to 20000
E
min typ max Unit
100 µA
100 µA
100 µA
160 V
10000
3500
20000
3V
3V
20 MHz
2 µs
6 µs
1.2 µs
1





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