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PDF D1485 Data sheet ( Hoja de datos )
| Número de pieza | D1485 | |
| Descripción | NPN Transistor - 2SD1485 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SD1485
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1054
s Features
q Extremely satisfactory linearity of the forward current transfer
ratio hFE
q Wide area of safe operation (ASO)
q High transition frequency fT
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
100
100
5
8
5
60
3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +155
Unit
V
V
V
A
A
W
˚C
˚C
swww.DatEaSlehceterti4cUa.lcoCmharacteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
hFE1
hFE2*
hFE3
VBE
VCE(sat)
fT
Cob
VCB = 100V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 3A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.3A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz
*hFE2 Rank classification
Rank
Q
P
hFE2 60 to 120 100 to 200
Unit: mm
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
min typ max Unit
50 µA
50 µA
20
60 200
20
1.8 V
2V
20 MHz
90 pF
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet D1485.PDF ] | |
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