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PDF GB75YF120N Data sheet ( Hoja de datos )
| Número de pieza | GB75YF120N | |
| Descripción | IGBT FOUR PAK MODULE | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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IGBT FOUR PAK MODULE
Features
• Square RBSOA
• HEXFRED low Qrr, low Switching Energy
• Positive VCE(on) Temperature Coefficient
• Copper Baseplate
• Low Stray Inductance Design
Bulletin I27209 01/06
GB75YF120N
ECONO2 4PAK
VCES = 1200V
IC = 75A @ TC = 67°C
VCE(on) typ. = 3.4V
Benefits
• Benchmark Efficiency for SMPS appreciation
in particular HF welding
• Rugged Transient Performance
• Low EMI, Requires Less Snubbing
• Direct Mounting to Heatsink space saving
• PCB Solderable Terminals
• Low Junction to Case Thermal Resistance
Absolute Maximum Ratings
Parameter
VCES
IC @ Tc=25°C
IC @ Tc=80°C
ICM
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IF @ Tc=25°C
IF @ Tc=80°C
IFM
VGE
PD @ Tc=25°C
PD @ Tc=80°C
TJ
TSTG
VISOL
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current (Ref. Fig. C.T.5)
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation (IGBT)
Maximum Power Dissipation (IGBT)
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Thermal and Mechanical Characteristics
RθJC (IGBT)
RθJC (Diode)
RθCS (Module)
Parameter
Junction-to-Case IGBT
Junction-to-Case Diode
Case-to-Sink, flat, greased surface
Mounting Torque (M5)
Weight
Max.
1200
100
67
200
200
40
25
150
±20
480
270
150
-40 to +125
AC 2500 (MIN)
Units
V
A
V
W
°C
V
Min
Typical
Maximum Units
- - 0.26 °C/W
- - 1.00
-
0.05
-
2.7 - 3.3 N*m
- 170 - g
1
1 page  
20
18
16
14
12
10
8
6
4
2
0
7
ICE= 75A
ICE = 50A
ICE = 25A
9 11 13 15 17 19
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = 125°C
GB75YF120N
Bulletin I27209 01/06
300
TJ = 25°C
250 TJ = 125°C
200
150
100
50
0
5 6 7 8 9 10 11 12
VGE (V)
Fig. 10 - Typ. Transfer Characteristics
VCE = 20V; tp = 500µs
1
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0.1
TJ = 125°C
0.01
0.001
400
TJ = 25°C
600 800 1000
VCES (V)
1200
Fig. 11 - Typ Zero Gate Voltage Collector
Current
5.5
5
4.5
4
3.5
3
2.5
2
0
TJ = 25°C
TJ = 125°C
0.2 0.4 0.6 0.8
IC (mA)
Fig. 12 - Typ Threshold Voltage
1
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet GB75YF120N.PDF ] | |
Hoja de datos destacado
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