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PDF AGR21125E Data sheet ( Hoja de datos )
| Número de pieza | AGR21125E | |
| Descripción | Transistor | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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AGR21125E
125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21125E is a high-voltage, gold-metalized,
enhancement mode, laterally diffused metal oxide
semiconductor (LDMOS) RF power transistor suit-
able for wideband code division multiple access
(W-CDMA), single and multicarrier class AB wireless
base station power amplifier applications.
7
AGR21125EU (unflanged) A4G8 R215125EF (flanged)
Figure 1. Available Packages
Features
Typical performance for two carrier 3GPP
W-CDMA systems. F1 = 2135 MHz and
F2 = 2145 MHz with 3.84 MHz channel BW, adja-
cent channel BW = 3.84 MHz at F1 – 5 MHz and
F2 + 5 MHz. Third-order distortion is measured
over 3.84 MHz BW at F1 – 10 MHz and
www.DataShFe2et+4U1.c0omMHz. Typical P/A ratio of 8.5 dB at 0.01%
(probability) CCDF:
— Output power: 28 W.
— Power gain: 14 dB.
— Efficiency: 27%.
— IM3: –34.5 dBc.
— ACPR: –38 dBc.
— Return loss: –10 dB.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 2140 MHz, 125 W contin-
uous wave (CW) output power.
Large signal impedance parameters available.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
AGR21125EU
AGR21125EF
Sym
Rı JC
Rı JC
Value
0.5
0.5
Unit
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Sym Value Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS –0.5, +15 Vdc
Total Dissipation at TC = 25 °C:
AGR21125EU
PD 350 W
AGR21125EF
PD 350 W
Derate Above 25 ˇC:
AGR21125EU
— 2.0 W/°C
AGR21125EF
— 2.0 W/°C
Operating Junction Tempera- TJ 200 °C
ture
Storage Temperature Range TSTG –65, +150 °C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR21125E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
dtaukreinngtoalal hvoainddelinxpgo, sausrseemtobElyS, Danadntdesetleocpterircaatlioonvse.rPAstEgreeAsrKes D(EeOvSic)es
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
1 page  
AGR21125E
125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
15.00
14.50
IDQ = 1600 mA IDQ = 1400 mA
14.00
13.50
13.00
12.50
12.00
11.50
11.00
1
IDQ = 1200 mA
IDQ = 1000 mA
IDQ = 800 mA
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
TWO-TONE
MEASUREMENT
10 MHz TONE
SPACING
10 100
OUTPUT POWER (W) PEP
1000
Figure 4. Two-Tone Power Gain vs. Output Power and IDQ
www.DataSheet4U.com
-20.00
-25.00
-30.00
-35.00
IDQ = 800 mA
IDQ = 1000 mA
-40.00 IDQ = 1600 mA
-45.00
-50.00
-55.00
-60.00
-65.00
IDQ = 1200 mA
IDQ = 1400 mA
-70.00
1
10 100
OUTPUT POWER (W) PEP
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
TWO-TONE
MEASUREMENT
10 MHz TONE
SPACING
1000
Figure 5. IMD3 vs. Output Power and IDQ
5 Page | ||
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| PDF Descargar | [ Datasheet AGR21125E.PDF ] | |
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