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PDF AGR19180EF Data sheet ( Hoja de datos )
| Número de pieza | AGR19180EF | |
| Descripción | Transistor | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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AGR19180EF
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19180EF is a 180 W, 28 V N-channel later-
ally diffused metal oxide semiconductor (LDMOS) RF
power field effect transistor (FET) suitable for
personal communication service (PCS) (1930 MHz—
1990 MHz), code division multiple access (CDMA),
global system for mobile communication
(GSM/EDGE), time division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier applications.
Device Performance Features
High-reliability, gold-metalization process.
Hot carrier injection (HCI) induced bias drift of <5%
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1960 MHz, 180 W output
power pulsed 4 µs at 10% duty.
Large signal impedance parameters available.
375D–03, STYLE 1
Figure 1. AGR19180EF (flanged) Package
CDMA Features
www.DataSheet4U.com
Typical two carrier CDMA performance:
VDD = 28 V, IDQ = 1600 mA, POUT = 38 W,
f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95/97
CDMA pilot, sync, paging, traffic codes 8—13
(9 channels) 1.2288 MHz channel bandwidth (BW),
adjacent channel power ration (ACPR) measured
over a 30 kHz BW at f1 – 885 kHz, f2 + 885 kHz.
Distortion products measured over 1.2288 MHz
channel BW at f1 – 2.5 MHz, f2 + 2.5 MHz.
Peak/avg = 9.72 dB @ 0.01% probability on
CCDF:
— Output power: 38 W.
— Power gain: 14.5 dB.
— Efficiency: 26%.
— IM3: –33 dBc.
— ACPR: –48.5 dBc
— Return loss: –12 dB.
ESD Rating*
AGR19180EF
HBM
MM
CDM
Minimum (V)
500
50
1000
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
tdaukreinngtoalal hvaoinddelinxpgo, sausrseemtobElyS, Danadntdesetleocpterircaatlioonvse.rPAstEgreeAsrKes (DEeOvSic)es
employs both a human-body model (HBM) and a charged-device
model (CDM) qualification requirement in order to determine
ESD-susceptibility limits and protection design evaluation. ESD
voltage thresholds are dependent on the circuit parameters used
in each of the models, as defined by JEDEC's JESD22-A114
(HBM) and JESD22-C101 (CDM) standards.
Caution: MOS devices are susceptible to damage from electro-
static charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
1 page  
AGR19180EF
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
0.2
0.1
0.2
0.3
0.4
f3
ZL
f1
f3
ZS
f1
0.4
0.6
0.8
10
20
50
Z0 = 10 Ω
MHz (f)
1930 (f1)
1960 (f2)
1990 (f3)
ZS Ω
(Complex Source Impedance)
2.58 – j5.9
2.36 – j5.26
2.37 – j4.51
ZL Ω
(Complex Optimum Load Impedance)
3.2 – j4.67
2.85 – j3.86
2.72 – j3.07
www.DataSZhSee=t4TUe.csot mcircuit impedance as measured from gate to gate, balanced configuration.
ZL = Test circuit impedance as measured from drain to drain, balanced configuration.
–
GATE (2)
+
DRAIN (1)
+
–
ZS ZL
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AGR19180EF.PDF ] | |
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