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PDF AGR19090E Data sheet ( Hoja de datos )
| Número de pieza | AGR19090E | |
| Descripción | Transistor | |
| Fabricantes | TriQuint Semiconductor | |
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AGR19090E
90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19090E is a 90 W, 28 V N-channel laterally
diffused metal oxide semiconductor (LDMOS) RF
power field effect transistor (FET) suitable for per-
sonal communication service (PCS) (1930 MHz—
1990 MHz), wide-band code division multiple access
(W-CDMA), global system for mobile communication
(GSM/EDGE), time-division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier applications.
AGR19090EU (unflanged) AGR19090EF (flanged)
Figure 1. Available Packages
N-CDMA Features
Typical 2 carrier N-CDMA performance: VDD =
28 V, IDQ = 850 mA, f1 = 1958.75 MHz, f2 =
1961.25 MHz, IS-95 CDMA (pilot, sync, paging,
traffic codes 8—13). Peak/average (P/A) = 9.72 dB
at 0.01% probability on CCDF. 1.2288 MHz trans-
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power
f1 –
885 kHz and f2 + 885 kHz. Third-order intermodu-
lation (IM3) distortion measured over a
1.2288 MHz BW at f1 – 2.5 MHz and f2 + 2.5 MHz.
— Output power (POUT): 18 W.
— Power gain: 15.0 dB.
— Efficiency: 25.8%.
— IM3: –34.5 dBc.
— ACPR: –50 dBc.
EDGE Features
Typical EDGE performance (1960 MHz, 26 V,
IDQ = 800 mA):
— Output power (POUT): 36 W.
— Power gain: 15.0 dB.
— Efficiency: 38%.
— Modulation spectrum:
@ ±400 kHz = –61.0 dBc.
@ ±600 kHz = –73.0 dBc.
— Error vector magnitude (EVM) = 2.2%.
GSM Features
Typical performance over entire GSM band:
— P1dB: 90 W typical.
— Continuous wave (CW) power gain: @ P1dB =
14.0 dB.
— CW Efficiency @ P1dB = 50% typical.
— Return loss: –12 dB.
Device Performance Features
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1930 MHz, 90 W CW
output power.
Large signal impedance parameters available.
ESD Rating*
AGR19090E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
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employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
1 page  
AGR19090E
90 W, 1930 MHz —1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics
Z0 = 10 Ω
0.1
0.2
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
f3 f1
ZL
0.2
0.4
0.6
f3 f1
ZS
0.8
0.3
0.4
10
20
50
MHz (f)
ZS Ω
(Complex Source Impedance)
ZL Ω
(Complex Optimum Load Impedance)
1930 (f1)
2.16 – j2.62
2.51 – j0.83
1960 (f2)
2.44 – j2.57
2.50 – j0.82
1990 (f3)
www.DataSheet4U.com
2.49 – j2.76
2.38 – j0.80
Note: ZL was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion.
GATE (2)
DRAIN (1)
ZS ZL
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
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| PDF Descargar | [ Datasheet AGR19090E.PDF ] | |
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