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AGR19045EF Schematic ( PDF Datasheet ) - TriQuint Semiconductor

Teilenummer AGR19045EF
Beschreibung Transistor
Hersteller TriQuint Semiconductor
Logo TriQuint Semiconductor Logo 




Gesamt 10 Seiten
AGR19045EF Datasheet, Funktion
AGR19045EF
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19045EF is a 45 W, 28 V N-channel later-
ally diffused metal oxide semiconductor (LDMOS)
RF power field effect transistor (FET) suitable for
personal communication service (PCS) (1930 MHz—
1990 MHz), global system for mobile communication
(GSM/EDGE), time-division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier applications.
Figure 1. AGR19045EF (flanged) Package
Typical two carrier N-CDMA performance: VDD =
28 V, IDQ = 550 mA, f1 = 1958.75 MHz, f2 =
1961.25 MHz, IS-95 CDMA (pilot, sync, paging,
traffic codes 8—13). Peak/average (P/A) = 9.72 dB
at 0.01% probability on CCDF. 1.2288 MHz trans-
mission bandwidth (BW). Adjacent channel power
ratio (ACPR) measured over 30 kHz BW at f1 –
885 kHz and f2 + 885 kHz. Third-order intermodu-
lation distortion (IM3) measured over a
www.DataShe1e.2t42U8.c8omMHz BW at f1 – 2.5 MHz and f2 + 2.5 MHz:
— Output power (POUT): 9.5 W.
— Power gain: 15 dB.
— Efficiency: 24.8%.
— IM3: –34.5 dBc.
— ACPR: –49.5 dBc.
EDGE Features
Typical EDGE performance,
1990 MHz, 26 V, IDQ = 400 mA:
— Output power (POUT): 18 W typical.
— Power gain: 14.5 dB.
— Efficiency: 35% typical.
— Spectral regrowth:
@ ±400 kHz = –62 dBc.
@ ±600 kHz = –74 dBc.
— Error vector magnitude (EVM) = 2.0%.
GSM Features
Typical performance over entire GSM band:
— P1dB: 50 W typical.
— Power gain @ P1dB = 14.0 dB continuous wave
(CW).
— Efficiency @ P1dB = 54% typical CW.
— Return loss: –10 dB.
Device Performance Features
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1930 MHz, 45 W CW out-
put power.
Large signal impedance parameters available.
ESD Rating*
AGR19045EF
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
tdaukreinngtoalal hvoainddelinxpgo, asussreemtobElyS, Danadntdesetleocpterircaatlioonvse.rPAstEgreeAsrKes D(EeOvSic)es
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.






AGR19045EF Datasheet, Funktion
AGR19045EF
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
50
45
GPS
40
P1dB=47.37dBm
(54.59W)
35
POUT
30
25
15 20 25 PIN(dBm)Z 30
Test Conditions:
VDD = 28 Vdc, IDQ = 400 mA, CW center frequency = 1960 MHz.
Figure 4. CW POUT vs. PIN
17
16
P3dB=48.20dBm
(66.03W)
15
14
13
12
11
10
9
8
7
35 40
50 -25
45 -30
40 -35
35
www.DataSheet4U.com
30
-40
-45
25 -50
20
GPS
15
10
885 kHz
2.25 MHz
5
Ƨ
1.25 MHz
-55
-60
-65
-70
0 -75
25 30 35 40 45
POUT (dBm) AVERAGEZ
Test Conditions:
VDD = 28 V, IDQ = 550 mA, f1 = 1960 MHz, N-CDMA, 2.5 MHz @ 1.2288 MHz bandwidth. Peak/Average = 9.72 dB @ 0.01% probability
(CCDF). Channel spacing (bandwidth): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz).
Figure 5. N-CDMA ACPR, Power Gain, and Drain Efficiency vs. Power

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