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Teilenummer | AGR19045EF |
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Beschreibung | Transistor | |
Hersteller | TriQuint Semiconductor | |
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Gesamt 10 Seiten AGR19045EF
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19045EF is a 45 W, 28 V N-channel later-
ally diffused metal oxide semiconductor (LDMOS)
RF power field effect transistor (FET) suitable for
personal communication service (PCS) (1930 MHz—
1990 MHz), global system for mobile communication
(GSM/EDGE), time-division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier applications.
Figure 1. AGR19045EF (flanged) Package
Typical two carrier N-CDMA performance: VDD =
28 V, IDQ = 550 mA, f1 = 1958.75 MHz, f2 =
1961.25 MHz, IS-95 CDMA (pilot, sync, paging,
traffic codes 8—13). Peak/average (P/A) = 9.72 dB
at 0.01% probability on CCDF. 1.2288 MHz trans-
mission bandwidth (BW). Adjacent channel power
ratio (ACPR) measured over 30 kHz BW at f1 –
885 kHz and f2 + 885 kHz. Third-order intermodu-
lation distortion (IM3) measured over a
www.DataShe1e.2t42U8.c8omMHz BW at f1 – 2.5 MHz and f2 + 2.5 MHz:
— Output power (POUT): 9.5 W.
— Power gain: 15 dB.
— Efficiency: 24.8%.
— IM3: –34.5 dBc.
— ACPR: –49.5 dBc.
EDGE Features
Typical EDGE performance,
1990 MHz, 26 V, IDQ = 400 mA:
— Output power (POUT): 18 W typical.
— Power gain: 14.5 dB.
— Efficiency: 35% typical.
— Spectral regrowth:
@ ±400 kHz = –62 dBc.
@ ±600 kHz = –74 dBc.
— Error vector magnitude (EVM) = 2.0%.
GSM Features
Typical performance over entire GSM band:
— P1dB: 50 W typical.
— Power gain @ P1dB = 14.0 dB continuous wave
(CW).
— Efficiency @ P1dB = 54% typical CW.
— Return loss: –10 dB.
Device Performance Features
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1930 MHz, 45 W CW out-
put power.
Large signal impedance parameters available.
ESD Rating*
AGR19045EF
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
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employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR19045EF
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
50
45
GPS
40
P1dB=47.37dBm
(54.59W)
35
POUT
30
25
15 20 25 PIN(dBm)Z 30
Test Conditions:
VDD = 28 Vdc, IDQ = 400 mA, CW center frequency = 1960 MHz.
Figure 4. CW POUT vs. PIN
17
16
P3dB=48.20dBm
(66.03W)
15
14
13
12
11
10
9
8
7
35 40
50 -25
45 -30
40 -35
35
www.DataSheet4U.com
30
-40
-45
25 -50
20
GPS
15
10
885 kHz
2.25 MHz
5
Ƨ
1.25 MHz
-55
-60
-65
-70
0 -75
25 30 35 40 45
POUT (dBm) AVERAGEZ
Test Conditions:
VDD = 28 V, IDQ = 550 mA, f1 = 1960 MHz, N-CDMA, 2.5 MHz @ 1.2288 MHz bandwidth. Peak/Average = 9.72 dB @ 0.01% probability
(CCDF). Channel spacing (bandwidth): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz).
Figure 5. N-CDMA ACPR, Power Gain, and Drain Efficiency vs. Power
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ AGR19045EF Schematic.PDF ] |
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