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PDF AGR18060E Data sheet ( Hoja de datos )
| Número de pieza | AGR18060E | |
| Descripción | Lateral MOSFET | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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AGR18060E
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
Introduction
The AGR18060E is a 60 W, 26 V N-channel laterally
diffused metal oxide semiconductor (LDMOS)
RF power field effect transistor (FET) suitable for
enhanced data for global evolution (EDGE), global
system for mobile communication (GSM), and single-
carrier or multicarrier class AB power amplifier appli-
cations. It is packaged in an industry-standard pack-
age and is capable of delivering a minimum output
power of 60 W, which makes it ideally suited for
today’s wireless base station RF power amplifier
applications.
AGR18060EU AGR18060EF
Figure 1. Available Packages
Features
Typical EDGE performance:
1880 MHz, 26 V, IDQ = 500 mA
— Output power (POUT): 20 W.
www.DataSh—eetP4oUw.coemr gain: 15 dB.
— Efficiency: 34%.
— Modulation spectrum:
@ ±400 kHz = –62 dBc.
@ ±600 kHz = –73 dBc.
— Error vector magnitude (EVM) = 2%.
Typical performance over entire GSM band:
— P1dB: 60 W typ.
— Power gain: @ P1dB = 14 dB.
— Efficiency @ P1dB = 52% typical.
— Return loss: –10 dB.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 26 Vdc, 1805 MHz, 60 W continu-
ous wave (CW) output power.
Large signal impedance parameters available.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
AGR18060EU
AGR18060EF
Sym
Rı JC
Rı JC
Value
1.00
1.00
Unit
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at TC = 25 °C:
AGR18060EU
AGR18060EF
Derate Above 25 ˇC:
AGR18060EU
AGR18060EF
Operating Junction Tempera-
ture
Storage Temperature Range
Sym Value Unit
VDSS 65 Vdc
VGS –0.5, 15 Vdc
PD 175 W
PD 175 W
— 1.00 W/°C
— 1.00 W/°C
TJ 200 °C
TSTG –65, 150 °C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR18060E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
tdaukreinngtoalal hvoainddelinxpgo, sausrseemtobElyS, Danadntdesetleocpterircaatlioonvse.rPAstEgreeAsrKes D(EeOvSic)es
employs both a human-body model (HBM) and a charged-device
model (CDM) qualification requirement in order to determine
ESD-susceptibility limits and protection design evaluation. ESD
voltage thresholds are dependent on the circuit parameters used
in each of the models, as defined by JEDEC's JESD22-A114
(HBM) and JESD22-C101 (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
1 page  
AGR18060E
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
80.00
0.0
70.00
60.00
POUT
-5.0
50.00
40.00
EFFICIENCY
-10.0
30.00
20.00
IRL
-15.0
10.00
0.00 -20.0
0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50
PIN, INPUT POWER (WATTS)Z
VDD = 26 V, IDQ = 500 mA, FREQUENCY = 1842.5 MHz, CW MEASUREMENT.
Figure 4. Output Power and Efficiency Versus Input Power
16
15
14
13
12
1
www.DataSheet4U.com
IDQ = 700 mA
IDQ = 500 mA
IDQ = 300 mA
10
POUT, OUTPUT POWER (WATTS)Z
VDD = 26 V, FREQUENCY = 1842.5 MHz, CW MEASUREMENT.
Figure 5. Power Gain Versus Output Power
100
16
15
14
13
12
11
10
1760
0
GPS -5
-10
IRL
-15
1780
1800
1820
1840
1860
f, FREQUENCY (MHz)Z
1880
-20
1900
VDD = 26 V, IDQ = 500 mA, PIN = 25 dBm, CW MEASUREMENT.
Figure 6. Gain and IRL Versus Signal Frequency
5 Page | ||
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