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PDF AGR18030EF Data sheet ( Hoja de datos )
| Número de pieza | AGR18030EF | |
| Descripción | Lateral MOSFET | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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AGR18030EF
30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Introduction
The AGR18030EF is a high-voltage, gold-metallized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power field effect transistor (FET) suit-
able for global system for mobile communication
(GSM), enhanced data for global evolution (EDGE),
and multicarrier class AB power amplifier applica-
tions. This device is manufactured using advanced
LDMOS technology offering state-of-the-art perfor-
mance and reliability. It is packaged in an industry-
standard package and is capable of delivering a min-
imum output power of 30 W, which makes it ideally
suited for today’s RF power amplifier applications.
Figure 1. Available (flanged) Packages
Features
Typical performance ratings for GSM EDGE
(f = 1.840 GHz, POUT = 10 W)
— Error vector magnitude (EVM): 1.6%
www.DataSh—eet4PUo.cwoemr gain: 15 dB
— Drain efficiency: 30%
— Modulation spectrum:
@ ±400 kHz = –64 dBc.
@ ±600 kHz = –71 dBc.
Typical continuous wave (CW) performance over
entire digital communication system (DCS) band:
— P1dB: 33 W typical (typ).
— Power gain: @ P1dB = 14 dB.
— Efficiency: @ P1dB = 51% typ.
— Return loss: –12 dB.
High-reliability, gold-metallization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
30 W minimum output power.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 26 Vdc, 1.840 GHz, 30 W CW
output power.
Large signal impedance parameters available.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case
Sym
Rı JC
Value
2.0
Unit
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Sym Value Unit
Drain-source Voltage
VDSS 65
Vdc
Gate-source Voltage
VGS –0.5, 15 Vdc
Drain Current Continuous
ID
Adc
Total Dissipation at TC = 25 °C PD 87.5 W
Derate Above 25 °C
— 0.5 W/°C
Operating Junction Tempera- TJ 200 °C
ture
Storage Temperature Range TSTG –65, 150 °C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR18030EF
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
tdaukreinngtoalal hvoainddelinxpgo, asussreemtobElyS, Danadntdesetleocpterircaatlioonvse.rPAstEgreeAsrKes D(EeOvSic)es
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
1 page  
AGR18030EF
30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
60
60
50 50
40
30 POUT
40
30
20 20
10 10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
PIN (W)
TEST CONDITIONS:
VDD = 26 V, IDQ = 300 mA, f = 1842.5 MHz, CW MEASUREMENT.
Figure 4. Output Power and Efficiency vs. Input Power
0
3.5
17
16
www.DataSheet4U.com 15
14
13
IDQ = 400 mA
IDQ = 350 mA
IDQ = 300 mA
IDQ = 250 mA
IDQ = 200 mA
12
11
10
9
8
0.0 0.1 1.0 10.0 100.0
TEST CONDITIONS:
VDD = 26 V, f = 1842.5 MHz, CW MEASUREMENT.
POUT (W)Z
Figure 5. CW Power Gain vs. Output Power
1000.0
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