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PDF AGR09130E Data sheet ( Hoja de datos )
| Número de pieza | AGR09130E | |
| Descripción | Lateral MOSFET | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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AGR09130E
130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09130E is a high-voltage, laterally diffused
metal oxide semiconductor (LDMOS) RF power tran-
sistor suitable for cellular band, code division multiple
access (CDMA), global system for mobile communi-
cation (GSM), enhanced data for global evolution
(EDGE), and time division multiple access (TDMA)
single and multicarrier class AB wireless base station
amplifier applications. This device is manufactured
on an advanced LDMOS technology offering state-
of-the-art performance, and reliability. Packaged in
an industry-standard package incorporating internal
matching and capable of delivering a minimum out-
put power of 130 W, it is ideally suited for today's RF
power amplifier applications.
7
48 5
AGR09130EU AGR09130EF
Figure 1. Available Packages
www.DataSheet4U.com
Features
Typical performance ratings are for the EDGE
format: 3GPP GSM 05.05:
— Output power (POUT): 50 W.
— Power gain: 17.8 dB.
— Modulation spectrum:
@ ±400 kHz = –60 dBc.
@ ±600 kHz = –72 dBc.
— Error vector magnitude (EVM) = 1.8%.
— Return loss: –10 dB.
High-reliability, gold-metalization process.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Si LDMOS.
Industry-standard packages.
P1dB of 130 W minimum output power.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
AGR09130EU
AGR09130EF
Sym
R JC
Value
0.5
0.5
Unit
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Sym Value Unit
Drain-source Voltage
VDSS 65 Vdc
Gate-source Voltage
VGS –0.5, 15 Vdc
Drain Current—Continuous ID 15 Adc
Total Dissipation at TC = 25 °C:
AGR09130EU
PD 350 W
AGR09130EF
350
Derate Above 25 C:
AGR09130EU
AGR09130EF
2.0 W/°C
2.0
Operating Junction Tempera- TJ 200 °C
ture
Storage Temperature Range TSTG –65, 150 °C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR09130E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. PAEgeArKe Devices
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
1 page  
AGR09130E
130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
200
180
160
140
120
100
80
60
40
20
0
0.00
960 MHz
940 MHz
POUT
920 MHz
960 MHz
PIN
920 MHz
940 MHz
0.50 1.00 1.50 2.00 2.50 3.00 3.50
INPUT POWER (PIN) (W)Z
VDD = 26 V, IDQ = 1.0 A, TF = 30 °C, FORMAT = CW.
Figure 4. POUT and Drain Efficiency vs. PIN
200
180
160
140
120
100
80
60
40
20
0
4.00
19
18.5
18
17.5
www.DataSheet4U.com 17
16.5
16
15.5
15
14.5
14
920
PG @ POUT = 50 W
PG @ POUT = 130 W
RL
925 930 935 940 945 950 955
FREQUENCY (MHz)Z
VDD = 26 V, IDQ = 1.0 A, TF = 30 °C.
Figure 5. Power Gain and Return Loss vs. Frequency
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
960
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