ADL5355 Datasheet PDF - Analog Devices
| Part Number | ADL5355 | |
| Description | 1200 MHz to 2500 MHz Balanced Mixer | |
| Manufacturers | Analog Devices | |
| Logo |  |
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1200 MHz to 2500 MHz Balanced Mixer,
LO Buffer, IF Amplifier, and RF Balun
ADL5355
FEATURES
RF frequency range of 1200 MHz to 2500 MHz
IF frequency range of 30 MHz to 450 MHz
Power conversion gain: 8.4 dB
SSB noise figure of 9.2 dB
SSB noise figure with 5 dBm blocker of 20 dB
Input IP3 of 27 dBm
Input P1dB of 10.4 dBm
Typical LO drive of 0 dBm
Single-ended, 50 Ω RF and LO input ports
High isolation SPDT LO input switch
Single-supply operation: 3.3 V to 5 V
Exposed paddle 5 mm × 5 mm, 20-lead LFCSP
1500 V HBM/500 V FICDM ESD performance
FUNCTIONAL BLOCK DIAGRAM
IFGM
20
IFOP
19
IFON
18
PWDN
17
LEXT
16
VPIF 1
ADL5355
15 LOI2
RFIN 2
14 VPSW
RFCT 3
COMM 4
BIAS
GENERATOR
13 VGS1
12 VGS0
APPLICATIONS
Cellular base station receivers
Transmit observation receivers
Radio link downconverters
GENERAL DESCRIPTION
The ADL5355 uses a highly linear, doubly balanced passive
mixer core along with integrated RF and LO balancing circuitry
to allow for single-ended operation. The ADL5355 incorporates
an RF balun, allowing for optimal performance over a 1200 MHz
to 2500 MHz RF input frequency range using low-side LO
www.DaintajeSchteioent4fUo.rcRomF frequencies from 1700 MHz to 2500 MHz and
high-side LO injection for RF frequencies from 1200 MHz to
1700 MHz. The balanced passive mixer arrangement provides
good LO-to-RF leakage, typically better than −39 dBm, and
excellent intermodulation performance. The balanced mixer
core also provides extremely high input linearity, allowing the
device to be used in demanding cellular applications where in-
band blocking signals may otherwise result in the degradation
of dynamic performance. A high linearity IF buffer amplifier
follows the passive mixer core to yield a typical power conversion
gain of 8.4 dB and can be used with a wide range of output
impedances.
COMM 5
11 LOI1
6
VLO3
7
LGM3
8
VLO2
9
LOSW
10
NC
NC = NO CONNECT
Figure 1.
The ADL5355 provides two switched LO paths that can be
used in TDD applications where it is desirable to rapidly switch
between two local oscillators. LO current can be externally set
using a resistor to minimize dc current commensurate with the
desired level of performance. For low voltage applications, the
ADL5355 is capable of operation at voltages down to 3.3 V with
substantially reduced current. Under low voltage operation, an
additional logic pin is provided to power down (<200 μA) the
circuit when desired.
The ADL5355 is fabricated using a BiCMOS high performance
IC process. The device is available in a 5 mm × 5 mm, 20-lead
LFCSP and operates over a −40°C to +85°C temperature range.
An evaluation board is also available.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2009 Analog Devices, Inc. All rights reserved.
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ADL5355
SPUR TABLES
All spur tables are (N × fRF) − (M × fLO) and were measured using the standard evaluation board. Mixer spurious products are measured
in dBc from the IF output power level. Data was only measured for frequencies less than 6 GHz. Typical noise floor of the measurement
system = −100 dBm.
5 V Performance
VS = 5 V, IS = 190 mA, TA = 25°C, fRF = 1900 MHz, fLO = 1697 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, and ZO = 50 Ω,
unless otherwise noted.
Table 4.
0
0
1 −42.3
2 −66.7
3 <−100
4
5
6
7
N
8
9
10
11
12
13
14
15
1
−10.0
0.0
−65.3
<−100
<−100
2
−21.1
−57.1
−57.0
−97.6
<−100
3
−53.8
−51.4
−67.0
−61.6
<−100
<−100
4
−75.9
−88.4
<−100
−97.9
<−100
<−100
5
<−100
<−100
<−100
<−100
<−100
<−100
6
<−100
<−100
<−100
<−100
<−100
<−100
M
7
<−100
<−100
<−100
<−100
<−100
<−100
8
<−100
<−100
<−100
<−100
<−100
<−100
<−100
9
<−100
<−100
<−100
<−100
<−100
<−100
<−100
10
<−100
<−100
<−100
<−100
<−100
<−100
<−100
11
<−100
<−100
<−100
<−100
<−100
<−100
12
<−100
<−100
<−100
<−100
<−100
<−100
13
<−100
<−100
<−100
<−100
<−100
<−100
14
<−100
<−100
<−100
<−100
<−100
<−100
3.3 V Performance
VS = 3.3 V, IS = 125 mA, TA = 25°C, fRF = 1900 MHz, fLO = 1697 MHz, LO power = 0 dBm, R9 = 226 Ω, R14 = 604 Ω, VGS0 = VGS1 = 0 V,
and ZO = 50 Ω, unless otherwise noted.
www.DaTtaabSlhee5e.t4U.com
01
0 −15.3
1 −42.9 0.0
2 −64.4 −67.3
3 <−100 <−100
4 <−100
5
6
7
N
8
9
10
11
12
13
14
15
2
−27.3
−58.3
−56.6
−95.5
<−100
3
−65.5
−52.2
−73.6
−60.4
<−100
<−100
4
−78.0
−75.7
<−100
−97.0
<−100
<−100
5
<−100
<−100
<−100
<−100
<−100
<−100
6
<−100
<−100
<−100
<−100
<−100
<−100
M
7
<−100
<−100
<−100
<−100
<−100
<−100
8
<−100
<−100
<−100
<−100
<−100
<−100
<−100
9
<−100
<−100
<−100
<−100
<−100
<−100
<−100
10
<−100
<−100
<−100
<−100
<−100
<−100
<−100
11
<−100
<−100
<−100
<−100
<−100
<−100
12
<−100
<−100
<−100
<−100
<−100
<−100
13
<−100
<−100
<−100
<−100
<−100
<−100
14
<−100
<−100
<−100
<−100
<−100
<−100
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