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Teilenummer | D2016 |
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Beschreibung | NPN Transistor - 2SD2016 | |
Hersteller | Allegro | |
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Gesamt 1 Seiten 2SD2016Darlingtonwww.DataSheet4U.com
Equivalent
circuit
B
C
(2kΩ) (200Ω) E
Silicon NPN Triple Diffused Planar Transistor
Application : Igniter, Relay and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SD2016
200
200
6
3
0.5
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=200V
VEB=6V
IC=10mA
VCE=4V, IC=1A
IC=1A, IB=1.5mA
IC=1A, IB=1.5mA
VCE=12V, IE=–0.1A
VCB=10V, f=1MHz
(Ta=25°C)
2SD2016
10max
10max
200min
1000 to 15000
1.5max
2.0max
90typ
40typ
Unit
µA
mA
V
V
V
MHz
pF
External Dimensions FM20(TO220F)
10.1±0.2
4.2±0.2
2.8 c0.5
ø3.3±0.2
a
b
1.35±0.15
1.35±0.15
2.54
0.85
+0.2
-0.1
2.54
0.45
+0.2
-0.1
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
a. Type No.
B C E b. Lot No.
I C– V CE Characteristics (Typical)
3
3mA
1.5mA
1mA
0.5mA
2
IB=0.3mA
1
0
0 1 2 34
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
3
2
1
125˚C
25˚C
–5 5 ˚ C
0
0.2
1
Base Current IB(mA)
2
1
0
30 1 2
Base-Emittor Voltage VBE(V)
10000
5000
h FE– I C Characteristics (Typical)
(VCE=4V)
1000
500
100
50
0.03
0.1 0.5 1
Collector Current IC(A)
3
h FE– I C Temperature Characteristics (Typical)
10000
5000
125˚C
(VCE=4V)
1000
500
25˚C
–55˚C
100
50
10
0.03
0.1 0.5 1
Collector Current IC(A)
3
θ j-a– t Characteristics
5
1
0.5
1
5 10
50 100
Time t(ms)
500 1000
f T– I E Characteristics (Typical)
(VCE=12V)
80
60
40
20
0
–0.01
–0.05 –0.1
–0.5 –1
Emitter Current IE(A)
–3
Safe Operating Area (Single Pulse)
Pc–Ta Derating
30
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
20
150x150x2
10 100x100x2
50x50x2
W
ith
Infinite
heatsink
Without Heatsink
2
0
0 25 50 75 100 125
Ambient Temperature Ta(˚C)
150
141
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Seiten | Gesamt 1 Seiten | |
PDF Download | [ D2016 Schematic.PDF ] |
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