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PDF PD84006-E Data sheet ( Hoja de datos )
| Número de pieza | PD84006-E | |
| Descripción | RF Power Transistor | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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PD84006-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ Broadband performances:
POUT = 6 W with 13 dB gain @ 870 MHz
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC european
directive
Description
The PD84006-E is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 7 V in common source mode at
frequencies of up to 1 GHz boasts the excellent
gain, linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF ’s superior
linearity performance makes it an ideal solution
for portable radio and UHF RFID reader.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf (search for AN1294).
PowerSO-10RF
(formed lead)
Figure 1. Pin connections
Source
Gate
Drain
Table 1.
Device summary
Order code
PD84006-E
August 2009
Package
PowerSO-10RF (formed lead)
Doc ID 16087 Rev 1
Packaging
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1/11
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11
1 page  
PD84006-E
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3 Typical performances
Typical performances
Figure 2.
Output power and efficiency Figure 3.
vs. frequency Vdd = 7.2 V,
Idq = 200 mA, Pin = 24 dBm
Gain vs. output power
Vdd = 7.2 V, Idq = 200 mA
7 70
6 65
5 60
4 55
3 50
2
Pout
Efficiency
45
1 40
740 760 780 800 820 840 860 880 900 920 940 960
Frequency (MHz)
Figure 4.
Input return loss vs.
frequency Vdd = 7.2 V,
Idq = 200 mA
17
16
15
14
13
12
11 740 MHz 850 MHz 950 MHz
10
9
8
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Output Power (W)
Figure 5.
Harmonics vs. frequency
Vdd = 7.2 V, Idq = 200 mA,
Pin = 24 dBm
0
-1
-2 Pin=24 dBm
-3
-4
-5
-6
-7
740 760 780 800 820 840 860 880 900 920 940 960
Frequency (MHz)
0
-10
-20
-30 H2 H3
-40
-50
-60
-70
-80
740 760 780 800 820 840 860 880 900 920 940 960
Frequency (MHz)
Figure 6.
Output power vs. frequency
and supply voltage
Pin = 24 dBm, Idq = 200 mA
8
7 Vcc=5V Vcc=6V Vcc=7.2V Vcc=9V
6
5
4
3
2
1
740 760 780 800 820 840 860 880 900 920 940 960
Frequency (MHz)
Doc ID 16087 Rev 1
5/11
5 Page 
PD84006-E
www.DataSheet4U.com
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Doc ID 16087 Rev 1
11/11
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